是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-213AA |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.31 |
其他特性: | METALLURGICALLY BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-213AA |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 最大功率耗散: | 0.5 W |
认证状态: | Qualified | 参考标准: | MIL-19500/158P |
标称参考电压: | 8.4 V | 表面贴装: | YES |
技术: | ZENER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 电压温度Coeff-Max: | 0.168 mV/ °C |
最大电压容差: | 5% | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX1N3157 | MICROSEMI |
获取价格 |
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, | |
JANTX1N3157-1 | MICROSEMI |
获取价格 |
Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, | |
JANTX1N3157A-1 | MICROSEMI |
获取价格 |
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, | |
JANTX1N3157UR-1 | MICROSEMI |
获取价格 |
暂无描述 | |
JANTX1N3164 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 300A, 200V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1 | |
JANTX1N3164R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 300A, 200V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1 | |
JANTX1N3168R | INFINEON |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 400V V(RRM), Silicon, DO-205AB | |
JANTX1N3170 | INFINEON |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 600V V(RRM), Silicon, DO-205AB | |
JANTX1N3172R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 300A, 800V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1 | |
JANTX1N3287R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 6V V(RRM), Germanium, |