Datasheet > JANTX1N3157UR-1

JANTX1N3157UR-1

更新时间： 2024-11-01 15:35:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	105K
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JANTX1N3157UR-1 数据手册

1N3154UR-1

thru

• 1N3154UR-1 THRU 1N3157UR-1 AVAILABLE IN JAN, JANTX, JANTXV

AND JANS PER MIL-PRF-19500/158

1N3157UR-1

and

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• LEADLESS PACKAGE FOR SURFACE MOUNT

CDLL3154

thru

• 8.4 VOLT NOMINAL ZENER VOLTAGE

• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

CDLL3157A

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

DC Power Dissipation: 500mW @ +50°C

Power Derating: 4 mW / °C above +50°C

REVERSE LEAKAGE CURRENT

l_R= 10 µA @ 25°C & V_R= 5.5Vdc

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.

MILLIMETERS

INCHES

DIM MIN MAX MIN MAX

1.60

0.41

3.30

1.70 0.063 0.067

0.55 0.016 0.022

3.70 .130 .146

CDI

TYPE

NUMBER

ZENER

VOLTAGE

ZENER

TEST

CURRENT

MAXIMUM

ZENER

IMPEDANCE

VOLTAGE

TEMPERATURE

STABILITY

TEMPERATURE

RANGE

EFFECTIVE

TEMPERATURE

COEFFICIENT

@ I

³V

2.54 REF.

0.03 MIN.

.100 REF.

.001 MIN.

MAXIMUM

(Note 2)

(Note 1)

OHMS

FIGURE 1

VOLTS

°C

% / °C

CDLL3154

CDLL3154A

8.00 - 8.80

130

172

-55 to +100

-55 to +150

.01

DESIGN DATA

CDLL3155

CDLL3155A

8.00 - 8.80

-55 to +100

-55 to +150

.005

CASE: DO-213AA, Hermetically sealed

glass case. (MELF, SOD-80, LL34)

CDLL3156

CDLL3156A

8.00 - 8.80

-55 to +100

-55 to +150

.002

LEAD FINISH: Tin / Lead

CDLL3157

CDLL3157A

8.00 - 8.80

-55 to +100

-55 to +150

.001

POLARITY: Diode to be operated with

the banded (cathode) end positive.

MOUNTING POSITION: Any.

NOTE 1

NOTE 2

Zener impedance is derived by superimposing on l

A 60Hz rms a.c. current

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

equal to 10% of l

The maximum allowable change observed over the entire temperature range

i.e., the diode voltage will not exceed the specified mV at any discrete

temperature between the established limits, per JEDEC standard No.5.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (978) 689-0803

WEBSITE: http://www.microsemi.com

107

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与JANTX1N3157UR-1相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N3164	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 200V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1
JANTX1N3164R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 200V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1
JANTX1N3168R	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 400V V(RRM), Silicon, DO-205AB
JANTX1N3170	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 600V V(RRM), Silicon, DO-205AB
JANTX1N3172R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 800V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1
JANTX1N3287R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 6V V(RRM), Germanium,
JANTX1N3287X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 6V V(RRM), Germanium,
JANTX1N3289A	POWEREX	获取价格	Rectifier Diode, 1 Phase, 1 Element, 100A, 200V V(RRM), Silicon,
JANTX1N3291	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
JANTX1N3291A	POWEREX	获取价格	Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon,

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