5秒后页面跳转
捷配首页

Datasheet > JANSD2N7381
JANSD2N7381 PDF预览

JANSD2N7381

更新时间： 2024-02-24 10:27:08
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
7页 646K
描述
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

阅读下载

中文翻译

获取价格

JANSD2N7381 技术参数

生命周期：End Of Life零件包装代码：TO-257AA
包装说明：FLANGE MOUNT, R-XSFM-P3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.64配置：SINGLE
最小漏源击穿电压：200 V最大漏极电流 (ID)：9.4 A
最大漏源导通电阻：0.49 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-257AAJESD-30 代码：R-XSFM-P3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL认证状态：Qualified
参考标准：MIL-19500/614表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

JANSD2N7381 数据手册

 浏览型号JANSD2N7381的Datasheet PDF文件第2页浏览型号JANSD2N7381的Datasheet PDF文件第3页浏览型号JANSD2N7381的Datasheet PDF文件第4页浏览型号JANSD2N7381的Datasheet PDF文件第5页浏览型号JANSD2N7381的Datasheet PDF文件第6页浏览型号JANSD2N7381的Datasheet PDF文件第7页 
JANSR2N7381  
Qualified Levels:  
JANSD, JANSR and  
JANSF  
Radiation Hardened N-Channel MOSFET  
Qualified per MIL-PRF-19500/614  
QPL RANGE and RAD LEVEL  
Radiation  
Level  
JANSD2N7381  
JANSR2N7381  
JANSF2N7381  
TID  
10 Krad  
100 Krad  
300 Krad  
DESCRIPTION  
These products are well suited for Space level applications requiring Total Dose radiation  
(TID) tolerance and Single Event capability. This 2N7381 is available in three qualified  
radiation levels and is packaged in a hermetic TO-257 outline. These products have all the  
same performance features of industry standard MOSFETs and may be used for most voltage  
control and fast switching applications.  
TO-257AA  
Package  
Important: For the latest information, visit our website http://www.microsemi.com.  
FEATURES  
•
•
•
•
•
Ease of paralleling  
Hermetically sealed package  
Low gate charge  
Single event hardened for space applications  
RHA level JANS qualifications available per MIL-PRF-19500/614.  
(See part nomenclature for all available options.)  
APPLICATIONS / BENEFITS  
•
•
•
•
Space level DC-DC converters  
Satellite Motor Control circuits  
Synchronous rectification  
Linear-mode applications  
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise stated  
Parameters / Test Conditions  
Operating & Storage Junction Temperature Range  
Thermal Resistance Junction-to-Case (see Figure 4)  
Symbol  
TJ & Tstg  
RӨJC  
Value  
-55 to +150  
1.67  
Unit  
°C  
oC/W  
Total Power Dissipation  
@ TA = +25 °C  
2
75  
PT  
W
@ TC = +25 °C (1)  
MSC – Lawrence  
6 Lake Street,  
Lawrence, MA 01841  
Tel: 1-800-446-1158 or  
(978) 620-2600  
Gate-Source Voltage, dc  
VGS  
ID1  
ID2  
IDM  
IS  
± 20  
V
A
A
A
A
Drain Current, dc @ TC = +25 ºC (2) (3)  
Drain Current, dc @ TC = +100 ºC (2) (3)  
Off-State Current (Peak Total Value) (4)  
Source Current  
9.4  
6.0  
37.6  
9.4  
Fax: (978) 689-0803  
NOTES: 1. Derated linearly 0.6 W/ºC for TC > +25 ºC  
MSC – Ireland  
2. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal  
wires and may also be limited by pin diameter:  
Gort Road Business Park,  
Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044  
Fax: +353 (0) 65 6822298  
3. See Figure 3 for maximum drain current graphs  
4. IDM = 4 X ID1 as calculated in note (2)  
Website:  
www.microsemi.com  
T4-LDS-0124, Rev. 3 (11/18/13)  
©2013 Microsemi Corporation  
Page 1 of 7  
1234567

中文翻译

下载PDF

与JANSD2N7381相关器件

型号 品牌 获取价格 描述 数据表
JANSD2N7382 MICROSEMI

获取价格

 		Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
JANSDTB122 ROHM

获取价格

 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
JANSDTD122 ROHM

获取价格

 		Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
JANSF2N2221A MICROSEMI

获取价格

 		Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSF2N2221AL MICROSEMI

获取价格

 		Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSF2N2221AUA MICROSEMI

获取价格

 		Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSF2N2221AUB MICROSEMI

获取价格

 		Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSF2N2221AUBC MICROSEMI

获取价格

 		Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSF2N2222A MICROSEMI

获取价格

 		Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSF2N2222AUA MICROSEMI

获取价格

 		Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

与JANSD2N7381相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证