是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
风险等级: | 5.8 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-39 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 1500 ns | 最大开启时间(吨): | 500 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANKCDF2N2906A | MICROSEMI |
获取价格 |
Transistor, | |
JANKCDF2N2907A | MICROSEMI |
获取价格 |
Transistor | |
JANKCDL2N5152 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
JANKCDL2N5154 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
JANKCDM2N5152 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
JANKCDM2N5154 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
JANKCDP2N5152 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
JANKCDP2N5154 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
JANKCDR2N5152 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
JANKCE1N58011 | MICROSEMI |
获取价格 |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |