Datasheet > JANKCDF2N2907A

JANKCDF2N2907A

更新时间： 2024-01-21 19:08:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
35页	369K
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Transistor

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JANKCDF2N2907A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.06	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	175 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.4 W	子类别：	Other Transistors
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

JANKCDF2N2907A 数据手册

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 11 December 2007.

INCH-POUND

MIL-PRF-19500/291R

11 September 2007

SUPERSEDING

MIL-PRF-19500/291P

16 June 2005

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,

TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA,

2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, AND 2N2907AUBC, JAN,

JANTX, JANTXV, JANJ, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,

JANSG, JANSH JANHCB, JANHCD JANKCB, JANKCD JANKCBM, JANKCBD,

JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two

levels of product assurance are provided for each unencapsulated device type. RHA level designators “M”, “D”, “P“,

“L” “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements.

1.2 Physical dimensions. See figure 1 (similar to a TO-18), figures 2, 3, and 4 (surface mount case outlines UA,

UB, and UBC), and figures 5 and 6 (JANHC and JANKC).

1.3 Maximum ratings. Unless otherwise specified T_A= +25°C.

Types

T and T

CBO

EBO

CEO

STG

mA dc

600

V dc

°C

All

devices

-65 to +200

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database. at http://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...35

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与JANKCDF2N2907A相关器件

型号	品牌	获取价格	描述	数据表
JANKCDL2N5152	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANKCDL2N5154	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANKCDM2N5152	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANKCDM2N5154	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANKCDP2N5152	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANKCDP2N5154	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANKCDR2N5152	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANKCE1N58011	MICROSEMI	获取价格	6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS
JANKCE1N5802	MICROSEMI	获取价格	2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS
JANKCE1N5804	MICROSEMI	获取价格	2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

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