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JANKCF1N5809 PDF预览

JANKCF1N5809

更新时间: 2024-02-18 10:57:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管快速恢复二极管
页数 文件大小 规格书
3页 49K
描述
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

JANKCF1N5809 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIE包装说明:S-XUUC-N1
针数:1Reach Compliance Code:compliant
HTS代码:8541.10.00.40风险等级:5.56
Is Samacsys:N应用:FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:S-XUUC-N1
JESD-609代码:e0元件数量:1
相数:1端子数量:1
最大输出电流:6 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
认证状态:Not Qualified参考标准:MIL-19500/477
最大反向恢复时间:0.03 µs表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

JANKCF1N5809 数据手册

 浏览型号JANKCF1N5809的Datasheet PDF文件第2页浏览型号JANKCF1N5809的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
1N5807  
1N5809  
1N5811  
JANHCE and JANKCE  
JANHCF and JANKCF  
FEATURES:  
·
·
·
·
·
·
·
·
Chip Outline Dimensions: 68 x 68 mils  
Chip Thickness: 8 to 12 mils  
Anode Metallization: Aluminum  
Metallization Thickness: 70,000Ã Nominal  
Bonding Area: 42 x 42 mils Min.  
Back Metallization: Gold-3000Ã Nominal  
6 AMPS  
FAST RECOVERY  
RECTIFIER CHIP  
50 - 150 VOLTS  
Junction Passivated with Thermal Silicon Dioxide - Planar Design  
Backside Available with Solderable Ag Backside as JANHCF or  
JANKCF  
Chip Type: RA  
TYPE  
VR  
VBR  
IO Tj = 75°C  
JANHCE1N5807  
JANHCE1N5809  
JANHCE1N58011  
JANKCE1N5807  
JANKCE1N5809  
JANKCE1N58011  
50V  
100V  
150V  
50V  
100V  
150V  
60V  
110V  
160V  
60V  
110V  
160V  
6.0A  
6.0A  
6.0A  
6.0A  
6.0A  
6.0A  
A
ELECTRICAL CHARACTERISTICS:  
CHARACTERISTIC  
SYMBOL  
TYPICAL  
MAX.  
UNITS  
Reverse Current  
Rated V , T = 25°C  
I
R
.01  
5
mA  
R
C
Reverse Current  
Rated V , T = 100°C  
I
1.0  
.84  
45  
150  
.875  
60  
mA  
Volts  
Pf  
R
C
R
Forward Voltage Drop I = 4A, T = 25°C  
V
F
F
C
Junction Capacitance @ V = 10V  
Cj  
R
REVERSE RECOVERY CHARACTERISTICS:  
CHARACTERISTIC  
SYMBOL  
TYPICAL  
MAX.  
UNITS  
Reverse Recovery Time  
I = 1A, I = 1A, I = 0.1A  
Trr  
Vrr  
2.5  
1.5  
30  
2.2  
15  
ns  
V
F
R
RR  
Forward Recovery Voltage @ 1A Tr = 8ns  
Forward Recovery Time  
I
= 500 mA  
ns  
FM  
MSC1345.PDF 02-23-99  

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