型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N6858-1E3 | MICROSEMI |
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Schottky Barrier Diode Qualified per MIL-PRF-19500/444 | |
JAN1N6858UR-1 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS | |
JAN1N7037CCU1 | MICROSEMI |
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SILICON DUAL SCHOTTKY POWER RECTIFIER 35 Amp, 100 Volt | |
JAN1N7038U3 | INFINEON |
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Rectifier Diode, Schottky, 1 Element, 30A, 150V V(RRM) | |
JAN1N7039CCT1 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 150V V(RRM), Silicon, TO-254AA, | |
JAN1N7039CCU1 | INFINEON |
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Rectifier Diode, Schottky, 35A, 150V V(RRM), | |
JAN1N7043CAT | INFINEON |
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Transistor | |
JAN1N7043CAT1 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 100V V(RRM), Silicon, TO-254AA, | |
JAN1N7043CCT1 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 100V V(RRM), Silicon, TO-254AA, | |
JAN1N7066 | SSDI |
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10 A, 100 V Hyperfast Recovery Rectifier |