Datasheet > JAN1N7039CCU1

JAN1N7039CCU1

更新时间： 2024-11-29 07:07:03

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
20页	214K
描述
Rectifier Diode, Schottky, 35A, 150V V(RRM),

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JAN1N7039CCU1 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.86 V	最大非重复峰值正向电流：	200 A
最高工作温度：	150 °C	最大输出电流：	35 A
最大重复峰值反向电压：	150 V	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
Base Number Matches：	1

JAN1N7039CCU1 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 March 2008.

INCH-POUND

MIL-PRF-19500/737A

5 December 2007

SUPERSEDING

MIL-PRF-19500/737

13 November 2006

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,

TYPES 1N7039CCT1, 1N7039CCU1 AND 1N7047CCT3, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual power rectifier

diodes for use in high frequency switching applications. Four levels of product assurance are provided for each

device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (U1), and figure 3 (TO-257AA).

1.3 Maximum ratings. Unless otherwise specified, maximum ratings (T = +25°C).

Column 6

Column 1

Types

Column 2

Column 3

Column 4

Column 5

ΘJC

STG

RWM

O (1)(2)

FSM (2)

t = 8.3 ms,

(2) (3)

and

+100°C

= +25°C

V dc

150

A dc

A (pk)

180

°C/W

1.9

°C

1N7039CCT1

-65 to

+150

1N7039CCU1

1N7047CCT3

150

200

120

1.67

1.85

(1) See temperature-current derating curves in figures 4, 5, and 6.

(2) Each leg

(3) See figures 7, 8, and 9.

1.4 Primary electrical characteristics at T = +25°C, unless otherwise indicated.

= 0.95 °C/W maximum for entire package for 1N7039CCT1; R

= 40°C/W maximum, for each leg;

= 0.95 °C/W maximum for entire

ΘJC

ΘJA

ΘJC

RΘJC = 0.83 °C/W maximum for entire package for 1N7039CCU1; R

package for 1N7047CCT3.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...20

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与JAN1N7039CCU1相关器件

型号	品牌	获取价格	描述	数据表
JAN1N7043CAT	INFINEON	获取价格	Transistor
JAN1N7043CAT1	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 100V V(RRM), Silicon, TO-254AA,
JAN1N7043CCT1	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 17.5A, 100V V(RRM), Silicon, TO-254AA,
JAN1N7066	SSDI	获取价格	10 A, 100 V Hyperfast Recovery Rectifier
JAN1N7066US	SSDI	获取价格	10 A, 100 V Hyperfast Recovery Rectifier
JAN1N7067	SSDI	获取价格	10 A, 150 V Hyperfast Recovery Rectifier
JAN1N7067US	SSDI	获取价格	10 A, 150 V Hyperfast Recovery Rectifier
JAN1N7068	SSDI	获取价格	10 A, 200 V Hyperfast Recovery Rectifier
JAN1N7068US	SSDI	获取价格	10 A, 200 V Hyperfast Recovery Rectifier
JAN1N746	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES

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