JAN1N5907TR

更新时间： 2024-11-15 05:11:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	217K
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1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR

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JAN1N5907TR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	DO-13
包装说明：	O-MALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.66
最小击穿电压：	6 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-202AA
JESD-30 代码：	O-MALF-W2	JESD-609代码：	e0
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
参考标准：	MIL-19500/500	最大重复峰值反向电压：	5 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JAN1N5907TR 数据手册

1N5907 and 1N5908

1500 WATT LOW VOLTAGE TRANSIENT

VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This pair of unidirectional low voltage Transient Voltage Suppressor (TVS)

devices for the 1N5907 and 1N5908 JEDEC registrations with different

packages have the same high Peak Pulse Power rating of 1500 W with

extremely fast response times. The 1N5907 is available in a military qualified

version as described in the Features section herein. They are most often used

for protecting against transients from inductive switching environments, induced

RF effects, or induced secondary lightning effects as found in surge levels of

IEC61000-4-5 described herein. They are also very successful in protecting

airborne avionics and electrical systems when low voltage is required. Since

their response time is virtually instantaneous, they can also protect from ESD

and EFT per IEC61000-4-2 and IEC61000-4-4.

DO-13

CASE 1

Both hermetic seal and molded types are available.

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Unidirectional TVS series for thru-hole mounting

• Protection from switching transients and induced RF

• Suppresses transients up to 1500 watts @ 10/1000 µs (Figure 1)

• Protects TTL, ECL, DTL, MOS, MSI, and other

integrated circuits requiring 5.0 V or lower power

supplies

in less than 100 pico seconds

• Low working voltage (V_WM) of 5 V

• Protection from ESD and EFT per IEC 61000-4-2 and

• Hermetic sealed DO-13 metal package for 1N5907 and plastic

IEC 61000-4-4

“Case 1” for 1N5908

• Secondary lightning protection per IEC61000-4-5 with

• JAN/TX/TXV military qualification available for 1N5907 per MIL-

PRF-19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g.

JANTXV1N5907

• Surface mount equivalent packages also available as SMCJ5.0

or SMCG5.0 in separate data sheet (consult factory for other

surface mount options)

42 Ohms source impedance: Class 1 thru 4

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance: Class 1 thru 4

• Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance: Class 2 & 3

• 1N5907 Inherently radiation hard as described in

Microsemi MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts for 10/1000 µs at lead temperature (T_L) 25^oC (See Figs.

• CASE (1N5907): DO-13 (DO-202AA) welded

1, 2, and 4) with repetition rate of 0.01% or less*

hermetically sealed metal and glass

•

Operating & Storage Temperatures: -65^oto +175^oC for 1N5907

and

• Case (1N5908): “Case 1” Void Free transfer molded

thermosetting epoxy body meeting UL94V-0

-65^oto +150^oC for 1N5908

• FINISH: External metal surfaces are Tin-Lead (Sn-

Pb) plated and solderable per MIL-STD-750 method

2026

•

THERMAL RESISTANCE (junction to lead): 50^oC/W for 1N5907 or

22 ^oC/W for 1N5908 at 0.375 inches (10 mm) from body

THERMAL RESISTANCE (junction to ambient): 110 ^oC/W for

1N5907, or 82 ^oC/W for 1N5908 when mounted on FR4 PC board

with 4 mm²copper pads (1 oz) and track width 1 mm, length 25 mm

• POLARITY: Polarity indicated by diode symbol or

cathode band (cathode connected to case for 1N5907)

• MARKING: Part number and polarity symbol

• WEIGHT: 1.4 grams. (Approx)

•

DC Power Dissipation* (1N5907): 1 Watt at T_L<125^oC 3/8” (10

mm) from body, or 1 Watt at T_A≤+65^oC when mounted on FR4 PC

board as described for thermal resistance junction to ambient

• TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

DC Power Dissipation* (1N5908): 5 Watts at T_L<+40^oC 3/8” (10

mm) from body, or 1.52 Watts at T_A= +25^oC when mounted on FR4

PC board as described for thermal resistance junction to ambient

• See package dimension on last page

•

Forward surge current: 200 A for 8.3ms half-sine wave at T_A=

+25^oC

Solder Temperatures: 260 ^oC for 10 s (maximum)

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

11-06-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与JAN1N5907TR相关器件

型号	品牌	获取价格	描述	数据表
JAN1N5908	MICROSEMI	获取价格	1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR
JAN1N5908TR	MICROSEMI	获取价格	1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR
JAN1N5968	MICROSEMI	获取价格	5 WATT GLASS ZENER DIODES
JAN1N5968C	MICROSEMI	获取价格	5 WATT GLASS ZENER DIODES
JAN1N5968C	CDI-DIODE	获取价格	Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N5968CUS	MICROSEMI	获取价格	5 WATT GLASS ZENER DIODES
JAN1N5968CUS	CDI-DIODE	获取价格	Zener Diode, 5.6V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N5968D	MICROSEMI	获取价格	5 WATT GLASS ZENER DIODES
JAN1N5968D	CDI-DIODE	获取价格	Zener Diode, 5.6V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N5968DUS	MICROSEMI	获取价格	5 WATT GLASS ZENER DIODES

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