Datasheet > JAN1N5969D

JAN1N5969D

更新时间： 2024-01-03 18:49:07

品牌	Logo	应用领域
CDI-DIODE		测试二极管
页数	文件大小	规格书
26页	186K
描述
Zener Diode, 6.2V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

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JAN1N5969D 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.39
其他特性：	HIGH RELIABILITY	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	1 Ω
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	0.5 W
认证状态：	Qualified	参考标准：	MIL-19500/356
标称参考电压：	6.2 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	技术：	ZENER
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	1%	工作测试电流：	220 mA
Base Number Matches：	1

JAN1N5969D 数据手册

INCH POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 24 February 2005.

MIL-PRF-19500/356H

24 November 2004

SUPERSEDING

MIL-PRF-19500/356G

5 September 2003

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,

1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,

AND C AND D TOLERANCE SUFFIX DEVICES,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Four

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two

levels of product assurance for each unencapsulated device type die.

1.2 Physical dimensions. See figures 1 (axial leaded), 2 (surface mount), and 3 (die).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings herein (see 3.10) and as follows:

P_Tat

T_L= +65°C

L = .375 inch

(9.53 mm)

1N4954

P_Tat

T_L= +25°C

L = .375 inch (9.53

mm)

P_Tat

T_EC= +125°C

T_Jand T_STG

Barometric pressure

reduced (high altitude

operation)

1N5968,

1N5969,

1N4954US

through

1N4954 through

1N4996

1N4954 through

1N4996

through

1N4996

1N6632 through

1N6637

1N4996US

N5968US,

1N5968,

1N5969,

1N5968,

1N5969,

1N5969US,

1N6632US through

1N6637US

1N6632 through

1N6637

including US suffix

1N6632 through

1N6637

including US suffix

5 W (1)

5 W (2)

5 W (3)

8 mHg

-65°C to +175°C

(1) Derate: See figure 4 herein.

(2) Derate: See figure 5 herein.

(3) Derate: See figures 5, 6 and 7 herein.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at http://assist.daps.dla.mil..

AMSC N/A

FSC 5961.

12 3 4 5 6 7...26

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与JAN1N5969D相关器件

型号	品牌	描述	获取价格	数据表
JAN1N5969DUS	MICROSEMI	5 WATT GLASS ZENER DIODES	获取价格
JAN1N5969DUS	CDI-DIODE	Zener Diode, 6.2V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2	获取价格
JAN1N5969US	MICROSEMI	5 WATT GLASS ZENER DIODES	获取价格
JAN1N6036	MICROSEMI	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	获取价格
JAN1N6036A	VISHAY	Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Bidirectional, 1 Element, Silicon, HERME	获取价格
JAN1N6036A	MICROSEMI	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	获取价格

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