1N5907 and 1N5908
1500 WATT LOW VOLTAGE TRANSIENT
VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This pair of unidirectional low voltage Transient Voltage Suppressor (TVS)
devices for the 1N5907 and 1N5908 JEDEC registrations with different
packages have the same high Peak Pulse Power rating of 1500 W with
extremely fast response times. The 1N5907 is available in a military qualified
version as described in the Features section herein. They are most often used
for protecting against transients from inductive switching environments, induced
RF effects, or induced secondary lightning effects as found in surge levels of
IEC61000-4-5 described herein. They are also very successful in protecting
airborne avionics and electrical systems when low voltage is required. Since
their response time is virtually instantaneous, they can also protect from ESD
and EFT per IEC61000-4-2 and IEC61000-4-4.
DO-13
CASE 1
Both hermetic seal and molded types are available.
(DO-202AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Unidirectional TVS series for thru-hole mounting
• Protection from switching transients and induced RF
• Suppresses transients up to 1500 watts @ 10/1000 µs (Figure 1)
• Protects TTL, ECL, DTL, MOS, MSI, and other
integrated circuits requiring 5.0 V or lower power
supplies
in less than 100 pico seconds
• Low working voltage (VWM) of 5 V
• Protection from ESD and EFT per IEC 61000-4-2 and
• Hermetic sealed DO-13 metal package for 1N5907 and plastic
IEC 61000-4-4
“Case 1” for 1N5908
• Secondary lightning protection per IEC61000-4-5 with
• JAN/TX/TXV military qualification available for 1N5907 per MIL-
PRF-19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g.
JANTXV1N5907
• Surface mount equivalent packages also available as SMCJ5.0
or SMCG5.0 in separate data sheet (consult factory for other
surface mount options)
42 Ohms source impedance: Class 1 thru 4
• Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance: Class 1 thru 4
• Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance: Class 2 & 3
• 1N5907 Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
1500 Watts for 10/1000 µs at lead temperature (TL) 25oC (See Figs.
• CASE (1N5907): DO-13 (DO-202AA) welded
1, 2, and 4) with repetition rate of 0.01% or less*
hermetically sealed metal and glass
•
Operating & Storage Temperatures: -65o to +175oC for 1N5907
and
• Case (1N5908): “Case 1” Void Free transfer molded
thermosetting epoxy body meeting UL94V-0
-65o to +150oC for 1N5908
• FINISH: External metal surfaces are Tin-Lead (Sn-
Pb) plated and solderable per MIL-STD-750 method
2026
•
•
THERMAL RESISTANCE (junction to lead): 50oC/W for 1N5907 or
22 oC/W for 1N5908 at 0.375 inches (10 mm) from body
THERMAL RESISTANCE (junction to ambient): 110 oC/W for
1N5907, or 82 oC/W for 1N5908 when mounted on FR4 PC board
with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm
• POLARITY: Polarity indicated by diode symbol or
cathode band (cathode connected to case for 1N5907)
• MARKING: Part number and polarity symbol
• WEIGHT: 1.4 grams. (Approx)
•
•
DC Power Dissipation* (1N5907): 1 Watt at TL <125oC 3/8” (10
mm) from body, or 1 Watt at TA ≤+65oC when mounted on FR4 PC
board as described for thermal resistance junction to ambient
• TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
DC Power Dissipation* (1N5908): 5 Watts at TL <+40oC 3/8” (10
mm) from body, or 1.52 Watts at TA = +25oC when mounted on FR4
PC board as described for thermal resistance junction to ambient
• See package dimension on last page
•
•
Forward surge current: 200 A for 8.3ms half-sine wave at TA =
+25oC
Solder Temperatures: 260 o C for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
Copyright 2002
Microsemi
Page 1
11-06-2003 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
