生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.5 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.2 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 最大功率耗散: | 0.5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 75 V |
最大反向恢复时间: | 0.004 µs | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N4150R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, | |
JAN1N4150UR-1 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, DO-213AA, 2 PIN | |
JAN1N4150X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, | |
JAN1N4153 | MICROSEMI |
获取价格 |
Silicon Switching Diode DO-35 Glass Package | |
JAN1N4153-1 | MICROSEMI |
获取价格 |
Silicon Switching Diode DO-35 Glass Package | |
JAN1N4153R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.1A, 75V V(RRM), Silicon, | |
JAN1N4153UR-1 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2 | |
JAN1N4153UR-1 | CDI-DIODE |
获取价格 |
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, GLASS PACKAGE-2 | |
JAN1N4153X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.1A, 75V V(RRM), Silicon | |
JAN1N4245 | MICROSEMI |
获取价格 |
MILITARY RECTIFIERS |