Datasheet > JAN1N4153

JAN1N4153

更新时间： 2024-11-16 11:26:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
1页	68K
描述
Silicon Switching Diode DO-35 Glass Package

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数据手册

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JAN1N4153 数据手册

1N4153,

1N4153-1

Silicon Switching Diode

DO-35 Glass Package

1N4150

Applications

Used in general purpose applications,where a low current controlled forward

characteristic and fast switching speed are important.

DO-35 Glass Package

Features

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Six sigma quality

Metallurgically bonded

BKC's Sigma Bond™ plating

for problem free solderability

LL-34/35 MELF SMD available

Full approval to Mil-S-19500/337

Available up to JANTXV-1 levels

"S" level screening available to SCDs

Dia.

0.06-0.09"

1.0"

25.4 mm

(Min.)

Length

0.120-.200"

3.05-5.08- mm

1.53-2.28 mm

Maximum Ratings

Symbol

Value

75 (Min.)

150

Unit

Peak Inverse Voltage

PIV

I_Avg

Volts

AverageRectifiedCurrent

mAmps

Amp

Continuous Forward Current

I_Fdc

300

Peak Surge Current (t_peak= 1 Sec.)

BKC Power Dissipation T_L= 50 ^oC, L = 3/8" from body

I_peak

P_tot

0.25

500

mWatts

Operating and Storage Temperature Range

T_{Op & St}

-65 to +200

^oC

Electrical Characteristics @ 25^oC*

Symbol

Minimum

0.49

Maximum

0.55

Unit

Volts

µA

ForwardVoltage

@ I_F= 100 µA V_F

V_F

I_R

@ I_F= 250 µA V_F

@ I_F= 1.0 mA V_F

@ I_F= 2.0 mAV_F

@ I_F= 10 mA

0.53

0.59

0.67

0.62

0.70

0.81

@ I_F= 20 mA

0.74

0.88

0.05(50 @ 150 ^oC)

Reverse Leakage Current @ V_R= 50 V

Breakdown Voltage @ I_R= 5.0 µA

Capacitance @ V_R= 0 V, f = 1mHz

Reverse Recovery Time (note 1)

Reverse Recovery Time (note 2)

PIV

C_T

t_rr

Volts

2.0

4.0

2.0

nSecs

nSec

t_rr

Note 1: Per Method 4031-A with I_F= I_R= 10 mA, R_L= 100 Ohms, C = 3 Pf. *Unless Otherwise Specified

Note2: Per Method 4031-A with I_F= I_R= 10 mA, Rr = 6 Volts, Rl=100 ohms.

6 Lake Street - Lawrence, MA 01841

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