JAN1N276

更新时间： 2024-11-01 22:05:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
1页	68K
描述
Germanium Diodes

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中文翻译

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数据手册

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JAN1N276 数据手册

Gold Bonded

1N276 Germanium Diodes

Optimized for Radio Frequency Response

Can be used in many AM, FM and TV-IF applications, replacing point contact devices.

Applications

AM/FM detectors

Ratio detectors

DO-7 Glass Package

FM discriminators

0.018-0.022"

0.458-.558 mm

TV audio detectors

RF input probes

TV video detectors

1.0"

25.4 mm

(Min.)

Length

0.230-0.30"

Dia

0.085-.107 "

2.16-2.71 mm

5.85-7.62mm

Features

Lower leakage current

Flat junction capacitance

High mechanical strength

At least 1 million hours MTBF

BKC's Sigma-Bond™ plating for

problem free solderability

Absolute Maximum Ratings at T_amb= 25 C Unless Otherwise Specified

Parameter

Symbols

Min.

Max.

Units

Peak Inverse Voltage

PIV

Volts

Surge Current,t = 1 Second

Peak Operating Current

I_S

I_FSR

0.4

270

Amps

Operating and Storage Temperatures

T_{J & STG}

-60

+90

^OC

Electrical Characteristics at T_amb= 25 ^OC

Parameter

TestConditions

Symbols

Min.

Typ.

Max.

Units

Forward Voltage Drop

I_F= 40 mA

V_F

1.0

Volts

Breakdown Voltage

Reverse Leakage

I_R= 1.0 mA

V_R= 10 Volts

V_R= 10 Volts,T_amb= 75 ^OC

PIV

I_R

5.0

100

Volts

µA

Junction Capacitance

Reverse Recovery Time trr (If = 5 mA. Irr (rec.)@0.5 mA,Vr= -40 Volts) trr

ForwardRecovery Voltage If = 50 mA PeakSine wave 100 KHz Vfr

f = 1MHz, V_R= 0 volt

C_J

0.8

***

nSec

Volts

300

3.0

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

中文翻译

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