J/SST108 SERIES
LOW NOISE SINGLE
N-CHANNEL JFET SWITCH
Linear Integrated Systems
FEATURES
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A
LOW ON RESISTANCE
FAST SWITCHING
rDS(on) ≤ 8Ω
tON ≤ 4ns
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
1
D
3
D
1
S
2
G
3
G
-55 to 150°C
-55 to 150°C
2
S
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
350mW
50mA
-25V
Gate to Drain or Source
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST108
J/SST109
J/SST110
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
IG = -1µA, VDS = 0V
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
VGS(off) Gate to Source Cutoff Voltage
VGS(F)
IDSS
IGSS
IG
-25
-3
-25
-2
-25
V
-10
-3
-6
-3
-0.5
-4
-3
VDS = 5V, ID = 1µA
Gate to Source Forward Voltage
Drain to Source Saturation Current2
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
0.7
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 10V, ID = 10mA
VDS = 5V, VGS = -10V
80
40
10
mA
nA
-0.01
-0.01
0.02
ID(off)
3
8
3
12
3
18
25
108, 109, 110
110A
Drain to Source
On Resistance
rDS(on)
Ω
VGS = 0V, VDS ≤ 0.1V
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST108
J/SST109
J/SST110
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
gfs
gos
Forward Transconductance
Output Conductance
17
0.6
V
DS = 5V, ID = 10mA
mS
f = 1kHz
VGS = 0V, ID = 0A
rds(on)
Drain to Source On Resistance
8
12
18
Ω
f = 1kHz
SST
60
60
11
11
VDS = 0V, VGS = 0V
Ciss
Input Capacitance
f = 1MHz
J
SST
J
85
15
85
15
85
15
pF
Reverse Transfer
Capacitance
VDS = 0V, VGS = -10V
Crss
en
f = 1MHz
VDS = 5V, ID = 10mA
nV/√Hz
Equivalent Input Noise Voltage
3.5
f = 1kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261