J109
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J109
FEATURES
This n-channel JFET is optimised for low noise high
DIRECT REPLACEMENT FOR SILICONIX J109
LOW ON RESISTANCE
FAST SWITCHING
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The hermetically
sealed TO-18 package is well suited for hi-reliability and
harsh environment applications.
rDS(on) ≤ 12Ω
t(on) ≤ 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
(See Packaging Information).
Storage Temperature
‐55°C to +150°C
‐55°C to +150°C
J109 Benefits:
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Low On Resistance
Low insertion loss
Low Noise
350mW
J109 Applications:
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
50mA
Analog Switches
Commutators
Choppers
VGDS = ‐25V
VGSS = ‐25V
Gate to Source Voltage
J109 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
IDSS
IGSS
IG
ID(off)
rDS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source Saturation Current (Note 2)
Gate Reverse Current
MIN
‐25
‐2
‐‐
40
‐‐
‐‐
‐‐
‐‐
TYP.
‐‐
‐‐
0.7
‐‐
‐0.01
‐0.01
0.02
‐‐
MAX
‐‐
‐6
‐‐
‐‐
‐3
‐‐
UNITS
CONDITIONS
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 10mA
VDS = 5V, VGS = ‐10V
VGS = 0V, VDS ≤ 0.1V
V
mA
nA
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
3
12
Ω
J109 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
gos
rDS(on)
Ciss
CHARACTERISTIC
MIN
‐‐
TYP.
17
0.6
‐‐
60
11
3.5
MAX
‐‐
UNITS
mS
CONDITIONS
VDS = 5V, ID = 10mA , f = 1kHz
Forward Transconductance
Click To Buy
Output Conductance
Drain to Source On Resistance
Input Capacitance
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
12
85
15
‐‐
Ω
VGS = 0V, ID = 0A, f = 1kHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = ‐10V, f = 1MHz
VDS = 5V, ID = 10mA , f = 1kHz
pF
nV/√Hz
Crss
en
Reverse Transfer Capacitance
Equivalent Noise Voltage
J109 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
3
VDD = 1.5V
VGS(H) = 0V
Turn On Rise Time
Turn Off Time
1
ns
td(off)
tf
4
See Switching Circuit
Turn Off Fall Time
18
Note 1 ‐ Absolute maximum ratings are limiting values above which J109 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
J109 SWITCHING CIRCUIT PARAMETERS
SWITCHING TEST CIRCUIT
VGS(L)
RL
‐7V
Available Packages:
TO-18 (Bottom View)
150Ω
10mA
J109 in TO-18
J109 in bare die.
ID(on)
Micross Components Europe
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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