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IXDD408YI PDF预览

IXDD408YI

更新时间： 2024-09-24 22:12:03
品牌 Logo 应用领域
IXYS 驱动器
页数 文件大小 规格书
10页 273K
描述
8 Amp Low-Side Ultrafast MOSFET Driver

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中文翻译

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IXDD408YI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：TO-263, D2PAK-5
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.91高边驱动器：YES
接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码：R-PSSO-G5
JESD-609代码：e0长度：9.975 mm
功能数量：1端子数量：5
最高工作温度：85 °C最低工作温度：-40 °C
标称输出峰值电流：8 A封装主体材料：PLASTIC/EPOXY
封装代码：TO-263封装等效代码：SMSIP5H,.6,67TB
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260电源：18 V
认证状态：Not Qualified座面最大高度：4.8 mm
子类别：MOSFET Drivers最大供电电压：25 V
最小供电电压：4.5 V标称供电电压：18 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：1.7 mm
端子位置：SINGLE处于峰值回流温度下的最长时间：35
断开时间：0.038 µs接通时间：0.042 µs
宽度：9.15 mmBase Number Matches：1

IXDD408YI 数据手册

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IXDD408PI / 408SI / 408YI / 408CI  
8 Amp Low-Side Ultrafast MOSFET Driver  
General Description  
Features  
• Built using the advantages and compatibility  
of CMOS and IXYS HDMOSTM processes.  
• Latch Up Protected  
TheIXDD408isahighspeedhighcurrentgatedriver  
specifically designed to drive the largest MOSFETs and  
IGBTs to their minimum switching time and maximum  
practical frequency limits. The IXDD480 can source and  
sink 8A of peak current while producing voltage rise and  
fall times of less than 30ns. The input of the driver is  
compatible with TTL or CMOS and is fully immune to  
latch up over the entire operating range. Designed with  
small internal delays, cross conduction/current shoot-  
through is virtually eliminated in the IXDD408. Its features  
and wide safety margin in operating voltage and power  
maketheIXDD408unmatchedinperformanceandvalue.  
• High Peak Output Current: 8A Peak  
• Operates from 4.5V to 25V  
• Ability to Disable Output under Faults  
• High Capacitive Load  
Drive Capability: 2500pF in <15ns  
• Matched Rise And Fall Times  
• Low Propagation Delay Time  
• LowOutputImpedance  
• LowSupplyCurrent  
Applications  
The IXDD408 incorporates a unique ability to disable the  
output under fault conditions. When a logical low is  
forced into the Enable input, both final output stage  
MOSFETs (NMOS and PMOS) are turned off. As a  
result, the output of the IXDD408 enters a tristate mode  
andachievesaSoftTurn-OffoftheMOSFET/IGBTwhen  
a short circuit is detected. This helps prevent damage  
that could occur to the MOSFET/IGBT if it were to be  
switchedoffabruptlyduetoadv/dtover-voltagetran-  
sient.  
• DrivingMOSFETsandIGBTs  
• Limiting di/dt under Short Circuit  
• MotorControls  
• LineDrivers  
• PulseGenerators  
• Local Power ON/OFF Switch  
• Switch Mode Power Supplies (SMPS)  
• DCtoDCConverters  
• PulseTransformerDriver  
• Class D Switching Amplifiers  
TheIXDD408isavailableinthestandard8-pinP-DIP(PI),  
SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263 (YI)  
surface-mountpackage.  
Figure 1 - Functional Diagram  
Copyright © IXYS CORPORATION 2001 Patent Pending  
First Release  
1234567...10

中文翻译

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IXDD408YI 替代型号

型号 品牌 替代类型 描述 数据表
IXDN430MYI IXYS

类似代替

 Buffer/Inverter Based MOSFET Driver, 30A, PSSO5, TO-263, D2PAK-5
IXDI430YI IXYS

类似代替

 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

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 		30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

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