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IXDD415

更新时间： 2024-01-31 04:06:07
品牌 Logo 应用领域
IXYS 驱动器
页数 文件大小 规格书
8页 163K
描述
Dual 15 Ampere Low-Side Ultrafast MOSFET Driver

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中文翻译

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IXDD415 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP, SOP28,.4
针数：28Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.84Is Samacsys：N
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G28长度：17.9 mm
功能数量：2端子数量：28
最高工作温度：85 °C最低工作温度：-40 °C
标称输出峰值电流：15 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP28,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：15 V
认证状态：Not Qualified座面最大高度：2.65 mm
子类别：MOSFET Drivers最大供电电压：30 V
最小供电电压：8 V标称供电电压：15 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.035 µs
接通时间：0.038 µs宽度：7.5 mm
Base Number Matches：1

IXDD415 数据手册

 浏览型号IXDD415的Datasheet PDF文件第2页浏览型号IXDD415的Datasheet PDF文件第3页浏览型号IXDD415的Datasheet PDF文件第4页浏览型号IXDD415的Datasheet PDF文件第5页浏览型号IXDD415的Datasheet PDF文件第6页浏览型号IXDD415的Datasheet PDF文件第7页 
IXDD415SI  
Dual 15 Ampere Low-Side Ultrafast MOSFET Driver  
General Description  
Features  
• Built using the advantages and compatibility  
of CMOS and IXYS HDMOSTM processes  
• Latch-UpProtected  
• High Peak Output Current: Dual 15A Peak  
• Wide Operating Range: 8V to 30V  
• Rise And Fall Times of <3ns  
• Minimum Pulse Width Of 6ns  
• Ability to Disable Output under Faults  
• High Capacitive Load  
Drive Capability: 4nF in <5ns  
• Matched Rise And Fall Times  
• 32ns Input To Output Delay Time  
• LowOutputImpedance  
The IXDD415 is a dual CMOS high speed high current gate  
driver specifically designed to drive MOSFETs in Class D and E  
HF RF applications, as well as other applications requiring  
ultrafast rise and fall times or short minimum pulse widths.  
Each output of the IXDD415 can source and sink 15A of peak  
current while producing voltage rise and fall times of less than  
3ns. The outputs of the IXDD415 may be paralleled, producing a  
single output of up to 30A with comparable rise and fall times.  
The input of the driver is compatible with TTL or CMOS and is  
fully immune to latch up over the entire operating range.  
Designed with small internal delays, cross conduction/current  
shoot-throughisvirtuallyeliminatedintheIXDD415. Itsfeatures  
and wide safety margin in operating voltage and power make  
theIXDD415unmatchedinperformanceandvalue.  
• LowSupplyCurrent  
The IXDD415 has two enable inputs, ENA and ENB. These  
enable inputs can be used to independently disable either of the  
outputs, OUTA or OUTB, for added flexibility. Additionally, the  
IXDD415 incorporates a unique ability to disable the output  
under fault conditions. When a logical low is forced into the  
Enable inputs, both final output stage MOSFETs (NMOS and  
PMOS) are turned off. As a result, the output of the IXDD415  
enters a tristate mode and achieves a Soft Turn-Off of the  
MOSFET when a short circuit is detected. This helps prevent  
damage that could occur to the MOSFET if it were to be  
switchedoffabruptlyduetoadv/dtover-voltagetransient.  
Applications  
• DrivingRFMOSFETs  
• Class D or E Switching Amplifier Drivers  
• Multi MHz Switch Mode Power Supplies (SMPS)  
• PulseGenerators  
• AcousticTransducerDrivers  
• PulsedLaserDiodeDrivers  
• DCtoDCConverters  
• PulseTransformerDriver  
The IXDD415 is available in a 28 pin SO package (IXDD415SI),  
incorporatingDEI'spatented(1) RFlayouttechniquestominimize  
stray lead inductances for optimum switching performance.  
(1)  
DEI U.S. Patent #4,891,686  
Figure 1 - Functional Diagram  
Vcc (1, 2)  
Vcc (3, 4)  
INA (7)  
ENA (6)  
OUTA (22, 23, 24)  
200k  
GND (25, 26)  
Vcc (11, 12)  
GND (27, 28)  
Vcc (13, 14)  
INB (8)  
ENB (9)  
OUTB (19, 20, 21)  
GND (17, 18)  
200k  
GND (15, 16)  
Copyright © IXYS CORPORATION 2001 Patent Pending  
First Release  
12345678

中文翻译

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IXDD504D2R IXYS

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