Datasheet > IXDD414YI

IXDD414YI

更新时间： 2024-01-20 20:03:57

品牌	Logo	应用领域
IXYS		驱动器
页数	文件大小	规格书
10页	246K
描述
14 Amp Low-Side Ultrafast MOSFET Driver

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中文翻译

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技术参数
数据手册
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IXDD414YI 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	SOP,
针数：	14	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.83	内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PDSO-G14
长度：	8.65 mm	功能数量：	1
端子数量：	14	最高工作温度：	125 °C
最低工作温度：	-55 °C	输出电流流向：	SOURCE AND SINK
标称输出峰值电流：	14 A	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.75 mm
最大供电电压：	35 V	最小供电电压：	4.5 V
标称供电电压：	18 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	34 µs	接通时间：	33 µs
宽度：	3.9 mm	Base Number Matches：	1

IXDD414YI 数据手册

IXDD414PI / 414YI / 414CI

14 Amp Low-Side Ultrafast MOSFET Driver

General Description

Features

• Built using the advantages and compatibility

of CMOS and IXYS HDMOS^TMprocesses.

• Latch-UpProtected

• High Peak Output Current: 14A Peak

• Wide Operating Range: 4.5V to 25V

• Ability to Disable Output under Faults

• High Capacitive Load

Drive Capability: 15nF in <30ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• LowOutputImpedance

TheIXDD414isahighspeedhighcurrentgatedriver

specifically designed to drive the largest MOSFETs and

IGBTs to their minimum switching time and maximum

practical frequency limits. The IXDD414 can source and

sink 14A of peak current while producing voltage rise and

fall times of less than 30ns. The input of the driver is

compatible with TTL or CMOS and is fully immune to

latch up over the entire operating range. Designed with

small internal delays, cross conduction/current shoot-

through is virtually eliminated in the IXDD414. Its features

and wide safety margin in operating voltage and power

maketheIXDD414unmatchedinperformanceandvalue.

• LowSupplyCurrent

The IXDD414 incorporates a unique ability to disable the

output under fault conditions. When a logical low is

forced into the Enable input, both final output stage

MOSFETs (NMOS and PMOS) are turned off. As a

result, the output of the IXDD414 enters a tristate mode

andachievesaSoftTurn-OffoftheMOSFET/IGBTwhen

a short circuit is detected. This helps prevent damage

that could occur to the MOSFET/IGBT if it were to be

switchedoffabruptlyduetoadv/dtover-voltagetran-

sient.

Applications

• DrivingMOSFETsandIGBTs

• Limiting di/dt under Short Circuit

• MotorControls

• LineDrivers

• PulseGenerators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies (SMPS)

• DCtoDCConverters

• PulseTransformerDriver

• Class D Switching Amplifiers

TheIXDD414isavailableinthestandard8-pinP-DIP(PI),

5-pin TO-220 (CI) and in the TO-263 (YI) surface-mount

package.

Figure 1 - Functional Diagram

200 k

First Release

12 3 4 5 6 7...10

中文翻译

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IXDD414YI 替代型号

型号	品牌	替代类型	描述	数据表
IXDN414YI	IXYS	类似代替	14 Ampere Low-Side Ultrafast MOSFET Drivers
IXDI414YI	IXYS	类似代替	14 Ampere Low-Side Ultrafast MOSFET Drivers

与IXDD414YI相关器件

型号	品牌	获取价格	描述	数据表
IXDD415	IXYS	获取价格	Dual 15 Ampere Low-Side Ultrafast MOSFET Driver
IXDD415SI	IXYS	获取价格	Dual 15 Ampere Low-Side Ultrafast MOSFET Driver
IXDD430	IXYS	获取价格	30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
IXDD430CI	IXYS	获取价格	30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
IXDD430MCI	IXYS	获取价格	Buffer/Inverter Based MOSFET Driver, 30A, PSFM5, TO-220, 5 PIN
IXDD430YI	IXYS	获取价格	30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
IXDD504	IXYS	获取价格	4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
IXDD504D2	IXYS	获取价格	4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
IXDD504D2R	IXYS	获取价格	4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
IXDD504D2T	IXYS	获取价格	4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown

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