Datasheet > ISL6620ACBZ

ISL6620ACBZ

更新时间： 2024-02-25 17:44:50

品牌	Logo	应用领域
英特矽尔 - INTERSIL		驱动器接口集成电路光电二极管
页数	文件大小	规格书
10页	221K
描述
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers

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数据手册

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ISL6620ACBZ 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	SOP, SOP8,.25	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.34
高边驱动器：	YES	接口集成电路类型：	AND GATE BASED MOSFET DRIVER
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
长度：	4.9 mm	湿度敏感等级：	3
功能数量：	1	端子数量：	8
最高工作温度：	85 °C	最低工作温度：	-40 °C
标称输出峰值电流：	4 A	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	电源：	5 V
认证状态：	Not Qualified	座面最大高度：	1.75 mm
子类别：	MOSFET Drivers	最大供电电压：	5.5 V
最小供电电压：	4.5 V	标称供电电压：	5 V
表面贴装：	YES	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn) - annealed	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	3.9 mm
Base Number Matches：	1

ISL6620ACBZ 数据手册

ISL6620, ISL6620A

Description

2.5V

PWM

PDHU

PDLU

TSSHD

PTS

UGATE

LGATE

PTS

TSSHD

PDHL

PDLL

FIGURE 1. TIMING DIAGRAM

shoot-through caused by the self turn-on of the lower

MOSFET due to high dV/dt of the switching node.

Operation and Adaptive Shoot-through Protection

Designed for high speed switching, the ISL6620, ISL6620A

MOSFET driver controls both high-side and low-side

N-Channel FETs from one externally provided PWM signal.

Advanced PWM Protocol (Patent Pending)

The advanced PWM protocol of ISL6620, ISL6620A is

specifically designed to work with Intersil VR11.1 controllers.

When ISL6620, ISL6620A detects a PSI protocol sent by an

Intersil VR11.1 controller, it turns on diode emulation

operation; otherwise, it remains in normal CCM PWM mode.

A rising transition on PWM initiates the turn-off of the lower

MOSFET (see Timing Diagram). After a short propagation

delay [t

], the lower gate begins to fall. Typical fall times

PDLL

[t ] are provided in the “Electrical Specifications” table on

page 4. Adaptive shoot-through circuitry monitors the LGATE

voltage and turns on the upper gate following a short delay

The controller communicates the tri-state signal to the driver

by transitioning the PWM signal from 0V to 2V. The driver

recognizes Diode Emulation mode and after 330ns

time [t

] after the LGATE voltage drops below ~1V. The

PDHU

upper gate drive then begins to rise [t ] and the upper

(typically) evaluates the PHASE voltage to detect negative

current, thus turning off LGATE. With no further PWM pulses

from the controller, both UGATE and LGATE are low and the

output can shut down. This feature helps prevent a negative

transient on the output voltage when the output is shut down,

eliminating the Schottky diode that is used in some systems

for protecting the load from reversed output voltage events.

Otherwise, the PWM rising and falling thresholds outlined in

the “Electrical Specifications” on page 4 determine when the

lower and upper gates are enabled.

MOSFET turns on.

A falling transition on PWM indicates the turn-off of the upper

MOSFET and the turn-on of the lower MOSFET. A short

propagation delay [t

] is encountered before the upper gate

PDLU

begins to fall [t ]. The adaptive shoot-through circuitry

monitors the UGATE-PHASE voltage and turns on the lower

MOSFET a short delay time [t

gate voltage drops below 1V. The lower gate then rises [t ],

turning on the lower MOSFET. These methods prevent both the

lower and upper MOSFETs from conducting simultaneously

(shoot-through), while adapting the dead time to the gate

charge characteristics of the MOSFETs being used.

], after the upper MOSFET’s

PDHL

Note that the LGATE will not turn off until the diode emulation

minimum LGATE ON-time of 350ns is expired for a PWM low

to tri-level (2.5V) transition.

This driver is optimized for voltage regulators with large step

down ratio. The lower MOSFET is usually sized larger

compared to the upper MOSFET because the lower MOSFET

conducts for a longer time during a switching period. The

lower gate driver is therefore sized much larger to meet this

application requirement. The 0.4Ω ON-resistance and 4A sink

current capability enable the lower gate driver to absorb the

current injected into the lower gate through the drain-to-gate

capacitor of the lower MOSFET and help prevent

Diode Emulation

Diode emulation allows for higher converter efficiency under

light-load situations. With diode emulation active, the

ISL6620, ISL6620A detects the zero current crossing of the

output inductor and turns off LGATE. This prevents the low

side MOSFET from sinking current and ensures that

discontinuous conduction mode (DCM) is achieved. The

LGATE has a minimum ON-time of 350ns in DCM mode.

FN6494.0

April 25, 2008

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与ISL6620ACBZ相关器件

型号	品牌	描述	获取价格	数据表
ISL6620ACRZ	INTERSIL	VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers	获取价格
ISL6620AIBZ	INTERSIL	VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers	获取价格
ISL6620AIBZ	RENESAS	4A AND GATE BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8	获取价格
ISL6620AIRZ	INTERSIL	VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers	获取价格
ISL6620AIRZ-T	RENESAS	4A AND GATE BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220, DFN-10	获取价格
ISL6620CBZ	INTERSIL	VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers	获取价格

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