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ISL6620IBZ-T PDF预览

ISL6620IBZ-T

更新时间: 2024-01-24 08:11:40
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
10页 533K
描述
4A AND GATE BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8

ISL6620IBZ-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.34
高边驱动器:YES接口集成电路类型:AND GATE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:3
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:4 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

ISL6620IBZ-T 数据手册

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DATASHEET  
ISL6620, ISL6620A  
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers  
FN6494  
Rev 0.00  
April 25, 2008  
The ISL6620, ISL6620A is a high frequency MOSFET driver  
designed to drive upper and lower power N-Channel  
Features  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Advanced Adaptive Zero Shoot-Through Protection  
• 36V Internal Bootstrap Schottky Diode  
MOSFETs in a synchronous rectified buck converter topology.  
The advanced PWM protocol of ISL6620, ISL6620A is  
specifically designed to work with Intersil VR11.1 controllers  
and combined with N-Channel MOSFETs, form a complete  
core-voltage regulator solution for advanced microprocessors.  
When ISL6620, ISL6620A detects a PSI protocol sent by an  
Intersil VR11.1 controller, it activates Diode Emulation (DE)  
operation; otherwise, it operates in normal Continuous  
Conduction Mode (CCM) PWM mode.  
• Advanced PWM Protocol (Patent Pending) to Support PSI  
Mode, Diode Emulation, Three-State Operation  
• Diode Emulation For Enhanced Light Load Efficiency  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency  
- 4A Sinking Current Capability  
The IC is biased by a single low voltage supply (5V),  
minimizing driving losses in high MOSFET gate capacitance  
and high switching frequency applications. Each driver is  
capable of driving a 3nF load with less than 10ns rise/fall time.  
Bootstrapping of the upper gate driver is implemented via an  
internal low forward drop diode, reducing implementation cost,  
complexity, and allowing the use of higher performance, cost  
effective N-Channel MOSFETs.  
- Fast Rise/Fall Times and Low Propagation Delays  
• VCC Undervoltage Protection  
• Enable Input and Power-On Reset  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
• DFN Package:  
To further enhance light load efficiency, ISL6620, ISL6620A  
enables diode emulation operation during PSI mode. This  
allows Discontinuous Conduction Mode (DCM) by detecting  
when the inductor current reaches zero and subsequently  
turning off the low side MOSFET to prevent it from sinking  
current.  
- Compliant to JEDEC PUB95 MO-220  
DFN - Dual Flat No Leads - Package Outline  
- Near Chip Scale Package Footprint, which Improves  
PCB Efficiency and has a Thinner Profile  
• Pb-Free (RoHS Compliant)  
An advanced adaptive shoot-through protection is integrated  
to prevent both the upper and lower MOSFETs from  
conducting simultaneously and to minimize dead time. The  
ISL6620, ISL6620A has a 20kintegrated high-side  
gate-to-source resistor to prevent self turn-on due to high  
input bus dV/dt.  
Applications  
• High Light Load Efficiency Voltage Regulators  
• Core Regulators for Advanced Microprocessors  
• High Current DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Brief TB417 “Designing Stable Compensation  
Networks for Single Phase Voltage Mode Buck  
Regulators” for Power Train Design, Layout Guidelines,  
and Feedback Compensation Design  
FN6494 Rev 0.00  
April 25, 2008  
Page 1 of 10  

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