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ISL6622AIBZ-T PDF预览

ISL6622AIBZ-T

更新时间: 2024-02-13 22:45:10
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
11页 566K
描述
3A AND GATE BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8

ISL6622AIBZ-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.64
高边驱动器:YES接口集成电路类型:AND GATE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:3
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:3 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:12 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:13.2 V
最小供电电压:6.8 V标称供电电压:12 V
电源电压1-最大:13.2 V电源电压1-分钟:4.75 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

ISL6622AIBZ-T 数据手册

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DATASHEET  
ISL6622A  
FN6601  
Rev 2.00  
March 19, 2009  
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers  
The ISL6622A is a high frequency MOSFET driver designed  
to drive upper and lower power N-Channel MOSFETs in a  
Features  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Advanced Adaptive Zero Shoot-Through Protection  
• 36V Internal Bootstrap Schottky Diode  
synchronous rectified buck converter topology. The advanced  
PWM protocol of ISL6622A is specifically designed to work  
with Intersil VR11.1 controllers and combined with  
N-Channel MOSFETs, form a complete core-voltage regulator  
solution for advanced microprocessors. When ISL6622A  
detects a PSI protocol sent by an Intersil VR11.1 controller, it  
activates Diode Emulation (DE) operation; otherwise, it  
operates in normal Continuous Conduction Mode (CCM)  
PWM mode.  
• Diode Emulation For Enhanced Light Load Efficiency  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency  
- 3A Sinking Current Capability  
- Fast Rise/Fall Times and Low Propagation Delays  
In the 8 Ld SOIC package, the ISL6622A drives the upper  
gate to 12V while the lower get can be driven from 5V to 12V.  
The 10 Ld DFN part allows for more flexibility. The upper gate  
can be driven from 5V to 12V using the UVCC pin and the  
lower gate can also be driven from 5V to 12V using the LVCC  
pin. This provides the flexibility necessary to optimize  
applications involving trade-offs between gate charge and  
conduction losses.  
• Advanced PWM Protocol (Patent Pending) to Support PSI  
Mode, Diode Emulation, Three-State Operation  
• Pre-POR Overvoltage Protection for Start-up and  
Shutdown  
• VCC Undervoltage Protection  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
To further enhance light load efficiency, the ISL6622A  
enables diode emulation operation during PSI mode. This  
allows Discontinuous Conduction Mode (DCM) by detecting  
when the inductor current reaches zero and subsequently  
turning off the low side MOSFET to prevent it from sinking  
current.  
• Dual Flat No-Lead (DFN) Package  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
• Pb-Free (RoHS Compliant)  
Applications  
An advanced adaptive shoot-through protection is integrated  
to prevent both the upper and lower MOSFETs from  
conducting simultaneously and to minimize dead time. The  
ISL6622A has a 20kintegrated high-side gate-to-source  
resistor to prevent self turn-on due to high input bus dV/dt.  
This driver adds an overvoltage protection feature  
operational while VCC is below its POR threshold; the  
PHASE node is connected to the gate of the low side  
MOSFET (LGATE) via a 10kresistor limiting the output  
voltage of the converter close to the gate threshold of the low  
side MOSFET, dependent on the current being shunted,  
which provides some protection to the load should the upper  
MOSFET(s) become shorted.  
• High Light Load Efficiency Voltage Regulators  
• Core Regulators for Advanced Microprocessors  
• High Current DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Technical Brief TB417 “Designing Stable Compensation  
Networks for Single Phase Voltage Mode Buck  
Regulators” for Power Train Design, Layout Guidelines,  
and Feedback Compensation Design  
FN6601 Rev 2.00  
March 19, 2009  
Page 1 of 11  

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