Datasheet > ISL6622BIRZ

ISL6622BIRZ

更新时间： 2024-02-18 08:58:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		驱动器
页数	文件大小	规格书
11页	254K
描述
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers

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ISL6622BIRZ 技术参数

生命周期：	Unknown	零件包装代码：	DFN, SOIC
包装说明：	HVSON, SOLCC10,.12,20	针数：	10, 8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	Factory Lead Time：	6 weeks
风险等级：	5.31	高边驱动器：	YES
接口集成电路类型：	AND GATE BASED MOSFET DRIVER	JESD-30 代码：	S-PDSO-N10
JESD-609代码：	e3	长度：	3 mm
湿度敏感等级：	1	功能数量：	1
端子数量：	10	最高工作温度：	85 °C
最低工作温度：	-40 °C	标称输出峰值电流：	3 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVSON
封装等效代码：	SOLCC10,.12,20	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	峰值回流温度（摄氏度）：	260
电源：	12 V	认证状态：	Not Qualified
座面最大高度：	1 mm	子类别：	MOSFET Drivers
最大供电电压：	13.2 V	最小供电电压：	6.8 V
标称供电电压：	12 V	电源电压1-最大：	13.2 V
电源电压1-分钟：	4.75 V	表面贴装：	YES
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn) - annealed
端子形式：	NO LEAD	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	30
宽度：	3 mm

ISL6622BIRZ 数据手册

ISL6622B

Data Sheet

March 19, 2009

FN6602.1

VR11.1 Compatible Synchronous

Rectified Buck MOSFET Drivers

Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

The ISL6622B is a high frequency MOSFET driver designed

to drive upper and lower power N-Channel MOSFETs in a

synchronous rectified buck converter topology. The advanced

PWM protocol of ISL6622B is specifically designed to work

with Intersil VR11.1 controllers and combined with

N-Channel MOSFETs, form a complete core-voltage regulator

solution for advanced microprocessors. When ISL6622B

detects a PSI PWM protocol sent by an Intersil VR11.1

controller, it activates Diode Emulation (DE) operation;

otherwise, it operates in normal Continuous Conduction

Mode (CCM) PWM mode.

• Integrated LDO with Selectable Lower Gate Drive Voltage

for Light Load Efficiency Optimization

• 36V Internal Bootstrap Diode

• Advanced PWM Protocol (Patent Pending) to Support PSI

Operation

• Diode Emulation for Enhanced Light Load Efficiency

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency

- 3A Sinking Current Capability

In the 8 Ld SOIC package, the ISL6622B drives the upper

gate to 12V while the lower drive voltage is fixed at 5.75V. The

10 Ld DFN part offers more flexibility: the upper gate can be

driven from 5V to 12V via the UVCC pin, while the lower gate

has a resistor-selectable drive voltage of 5.75V, 6.75V, and

7.75V (typically). This provides the flexibility necessary to

optimize applications involving trade-offs between gate

charge and conduction losses.

- Fast Rise/Fall Times and Low Propagation Delays

• Integrated UGATE-to-PHASE Resistor for Increased

Upper MOSFET Input Bus High dV/dt Immunity

• Pre-POR Overvoltage Protection at Start-Up and

Shutdown

• Dual Flat No-Lead (DFN) Package

To further enhance light load efficiency, the ISL6622B

enables diode emulation operation during PSI mode. This

allows for Discontinuous Conduction Mode (DCM) operation

by detecting when the inductor current reaches zero and

subsequently turning off the low side MOSFET to prevent it

from sinking current.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

- Bottom Copper Pad for Enhanced Heat Sinking

• Pb-Free (RoHS Compliant)

Applications

An advanced adaptive shoot-through protection is integrated

to prevent both the upper and lower MOSFETs from

conducting simultaneously and to minimize dead time. The

ISL6622B has a 20kΩ integrated high-side MOSFET

gate-to-source resistor to prevent self turn-on due to high

input bus dV/dt. This driver also has an overvoltage

protection feature operational while VCC is below the POR

threshold: the PHASE node is connected to the gate of the

low side MOSFET (LGATE) via a 10kΩ resistor, limiting the

output voltage of the converter close to the gate threshold of

the low side MOSFET, dependent on the current being

shunted, which provides some protection to the load should

the upper MOSFET(s) be shorted prior to start-up.

• High Light-Load Efficiency Voltage Regulators

• Core Regulators for Advanced Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief TB417 “Designing Stable Compensation

Networks for Single Phase Voltage Mode Buck

Regulators” for Power Train Design, Layout Guidelines,

and Feedback Compensation Design

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

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