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ISL21009BMB850EP PDF预览

ISL21009BMB850EP

更新时间: 2024-11-25 20:32:47
品牌 Logo 应用领域
瑞萨 - RENESAS 光电二极管
页数 文件大小 规格书
14页 630K
描述
THREE TERM VOLTAGE REFERENCE, PDSO8, SOIC-8

ISL21009BMB850EP 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:unknown风险等级:5.68
模拟集成电路 - 其他类型:THREE TERMINAL VOLTAGE REFERENCEJESD-30 代码:R-PDSO-G8
长度:4.9 mm端子数量:8
最高工作温度:125 °C最低工作温度:-55 °C
标称输出电压:5 V封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Voltage References表面贴装:YES
技术:CMOS最大电压温度系数:3 ppm/ °C
温度等级:MILITARY端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
微调/可调输出:NO最大电压容差:0.5%
宽度:3.9 mmBase Number Matches:1

ISL21009BMB850EP 数据手册

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DATASHEET  
ISL21009MEP  
High Voltage Input Precision, Low Noise FGA™ Voltage References  
FN6744  
Rev 0.00  
December 15, 2008  
The ISL21009MEP FGA™ voltage references are extremely  
low power, high precision, and low noise voltage references  
Features  
• Specifications per DSCC VID V62/08629  
fabricated on Intersil’s proprietary Floating Gate Analog  
technology. The ISL21009MEP features very low noise  
(4.5µVP-P for 0.1Hz to 10Hz), low operating current (180µA,  
Max), and 3ppm/°C of temperature drift. In addition, the  
ISL21009 family features guaranteed initial accuracy as low  
as ±0.5mV.  
• Full Mil-Temp Electrical Performance from -55°C to +125°C  
• Controlled Baseline with One Wafer Fabrication Site and  
One Assembly/Test Site  
• Full Homogeneous Lot Processing in Wafer Fab  
• No Combination of Wafer Fabrication Lots in Assembly  
This combination of high initial accuracy, low power and low  
output noise performance of the ISL21009MEP enables  
versatile high performance control and data acquisition  
applications with low power consumption.  
• Full Traceability Through Assembly and Test by  
Date/Trace Code Assignment  
• Enhanced Process Change Notification  
• Enhanced Obsolescence Management  
Device Information  
• Eliminates Need for Up-Screening a COTS Component  
The specifications for an Enhanced Product (EP) device are  
defined in a Vendor Item Drawing (VID), which is controlled  
by the Defense Supply Center in Columbus (DSCC).  
“Hot-links” to the applicable VID and other supporting  
application information are provided on our website.  
• Output Voltages . . . . . . . . . . . . . . 2.500V, 4.096V, 5.000V  
• Initial Accuracy. . . . . . . . . . . . . . . . . . . . .±0.5mV, ±1.0mV  
• Input Voltage Range. . . . . . . . . . . . . . . . . . . 3.5V to 16.5V  
• Output Voltage Noise . . . . . . . . .4.5µVP-P (0.1Hz to 10Hz)  
• Supply Current . . . . . . . . . . . . . . . . . . . . . . . .180µA (Max)  
Temperature Coefficient. . . . . . . . . . . . 3ppm/°C, 5ppm/°C  
• Output Current Capability. . . . . . . . . . . . . . . Up to ±7.0mA  
• Operating Temperature Range. . . . . . . . .-55°C to +125°C  
• Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ld SOIC  
Available Options  
VOUT  
OPTION  
(V)  
INITIAL  
ACCURACY  
(mV)  
TEMPCO.  
(ppm/°C)  
PART NUMBER  
ISL21009BMB825EP  
ISL21009CMB825EP  
ISL21009BMB841EP  
ISL21009BMB850EP  
ISL21009CMB850EP  
2.500  
2.500  
4.096  
5.000  
5.000  
±0.5  
±1.0  
±0.5  
±0.5  
±1.0  
3
5
3
3
5
Applications  
• Defense/Commercial Avionics  
• Radar/Sonar Systems  
• Signal Processing Applications  
Pinout  
ISL21009MEP  
(8 LD SOIC)  
TOP VIEW  
GND or NC  
VIN  
1
2
3
4
8
7
6
5
DNC  
DNC  
DNC  
VOUT  
GND  
TRIM or NC  
FN6744 Rev 0.00  
December 15, 2008  
Page 1 of 14  

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