Datasheet > ISL21009MEP

ISL21009MEP

更新时间： 2024-11-25 05:39:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
14页	558K
描述
High Voltage Input Precision, Low Noise FGA™ Voltage References

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ISL21009MEP 数据手册

ISL21009MEP

Data Sheet

December 15, 2008

FN6744.0

High Voltage Input Precision, Low Noise

FGA™ Voltage References

Features

• Specifications per DSCC VID V62/08629

The ISL21009MEP FGA™ voltage references are extremely

low power, high precision, and low noise voltage references

fabricated on Intersil’s proprietary Floating Gate Analog

technology. The ISL21009MEP features very low noise

(4.5µV_P-Pfor 0.1Hz to 10Hz), low operating current (180µA,

Max), and 3ppm/°C of temperature drift. In addition, the

ISL21009 family features guaranteed initial accuracy as low

as ±0.5mV.

• Full Mil-Temp Electrical Performance from -55°C to +125°C

• Controlled Baseline with One Wafer Fabrication Site and

One Assembly/Test Site

• Full Homogeneous Lot Processing in Wafer Fab

• No Combination of Wafer Fabrication Lots in Assembly

• Full Traceability Through Assembly and Test by

Date/Trace Code Assignment

This combination of high initial accuracy, low power and low

output noise performance of the ISL21009MEP enables

versatile high performance control and data acquisition

applications with low power consumption.

• Enhanced Process Change Notification

• Enhanced Obsolescence Management

• Eliminates Need for Up-Screening a COTS Component

• Output Voltages . . . . . . . . . . . . . . 2.500V, 4.096V, 5.000V

• Initial Accuracy. . . . . . . . . . . . . . . . . . . . .±0.5mV, ±1.0mV

• Input Voltage Range. . . . . . . . . . . . . . . . . . . 3.5V to 16.5V

• Output Voltage Noise . . . . . . . . .4.5µV_P-P(0.1Hz to 10Hz)

• Supply Current . . . . . . . . . . . . . . . . . . . . . . . .180µA (Max)

• Temperature Coefficient. . . . . . . . . . . . 3ppm/°C, 5ppm/°C

• Output Current Capability. . . . . . . . . . . . . . . Up to ±7.0mA

• Operating Temperature Range. . . . . . . . .-55°C to +125°C

• Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ld SOIC

Device Information

The specifications for an Enhanced Product (EP) device are

defined in a Vendor Item Drawing (VID), which is controlled

by the Defense Supply Center in Columbus (DSCC).

“Hot-links” to the applicable VID and other supporting

application information are provided on our website.

Available Options

V_OUT

OPTION

(V)

INITIAL

ACCURACY

(mV)

TEMPCO.

(ppm/°C)

PART NUMBER

ISL21009BMB825EP

ISL21009CMB825EP

ISL21009BMB841EP

ISL21009BMB850EP

ISL21009CMB850EP

2.500

4.096

5.000

±0.5

±1.0

±0.5

±1.0

Applications

• Defense/Commercial Avionics

• Radar/Sonar Systems

• Signal Processing Applications

Pinout

ISL21009MEP

(8 LD SOIC)

TOP VIEW

GND or NC

V_IN

DNC

V_OUT

GND

TRIM or NC

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

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