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IS9-1825BSRH-8 PDF预览

IS9-1825BSRH-8

更新时间: 2024-11-21 19:59:03
品牌 Logo 应用领域
瑞萨 - RENESAS 开关
页数 文件大小 规格书
7页 281K
描述
SWITCHING CONTROLLER

IS9-1825BSRH-8 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.77模拟集成电路 - 其他类型:SWITCHING CONTROLLER
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IS9-1825BSRH-8 数据手册

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DATASHEET  
Single Event and Total Dose Hardened, High-Speed,  
Dual Output PWMs  
IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH,  
ISL71823BSRH  
The single event and total dose hardened pulse width  
modulators are designed to be used in high frequency,  
Features  
• Electrically screened to DLA SMD# 5962-02511  
• QML qualified per MIL-PRF-38535 requirements  
switching power supplies in either voltage or current-mode  
configurations. These designs include a precision voltage  
reference, a low power start-up circuit, a high frequency  
oscillator, a wide-band error amplifier and a fast current-limit  
comparator.  
• EH version is wafer-by-wafer acceptance tested to  
50krad(Si) (LDR)  
• Radiation environment  
The IS-1825ASRH, IS-1825BSRH and IS-1825BSEH feature  
dual, alternating output operating from zero to less than 50%  
duty-cycle, while the ISL71823ASRH and ISL71823BSRH  
features dual, in-phase output operating from zero to less than  
100% duty cycle. The “B” versions test the delay from clock out  
to PWM output switching after power has been applied to the  
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)  
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)  
- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated  
2
- SEU immune. . . . . . . . . . . . . LET = 35MeV/mg/cm (max)  
• Oscillator frequency. . . . . . . . . . . . . . . . . . . . . . . . 1MHz (max)  
• High output drive current . . . . . . . . . . . . . . . . . . 1A peak (typ)  
• Low start-up current. . . . . . . . . . . . . . . . . . . . . . . 300µA (max)  
modulator (t  
) (see Figure 3). The ISL-825BSEH is  
PWM  
wafer-by-wafer acceptance tested to 50krad(Si) at a low dose  
rate of 10mrad(Si)/s.  
Constructed with the Intersil Rad-hard Silicon Gate (RSG)  
dielectrically isolated BiCMOS process, these devices are  
immune to single event latch-up and have been specifically  
designed to provide a high level of immunity to single event  
transients. All specified parameters are guaranteed and tested  
for 300krad(Si) total dose performance.  
• Undervoltage lockout  
- Start threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8V (max)  
- Stop threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.6V (min)  
- Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mV (min)  
• Pulse-by-pulse current limiting  
• Programmable leading edge blanking  
Related Literature  
• IS-1825ASRH Radiation Test Report  
• IS-1825ASRH Single Event Effects Report  
Applications  
• Voltage or current-mode switching power supplies  
• Control of high current MOSFET drivers  
• Motor speed and direction control  
Pin Configurations  
IS1-1825ASRH, IS1-1825BSRH, IS-1825BSEH  
ISL71823BSRHVD, ISL71823ASRHQD  
(CDIP2-T16 SBDIP)  
IS9-1825ASRH, IS9-1825BSRH, IS9-1825BSEH  
ISL71823ASRHQF, ISL71823BSRHVF  
(CDFP4-F20 FLATPACK)  
TOP VIEW  
TOP VIEW  
NC  
INV  
1
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
VREF  
VCC  
INV  
NON-INV  
E/A OUT  
CLK/LEB  
RT  
1
2
3
4
5
6
7
8
16 VREF  
15 VCC  
2
NON-INV  
E/A OUT  
CLK/LEB  
RT  
3
OUT B  
PGND  
VC  
14 OUT B  
13 VC  
4
5
12 PGND  
11 OUT A  
10 GND  
6
VC  
CT  
CT  
7
PGND  
OUT A  
GND  
RAMP  
SS  
8
RAMP  
SS  
9
9
ILIM/SD  
NC  
10  
ILIM/SD  
May 23, 2013  
FN9065.5  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2012, 2013. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
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