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IS93C46-3SPM PDF预览

IS93C46-3SPM

更新时间： 2024-11-21 13:08:55
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器
页数 文件大小 规格书
10页 85K
描述
EEPROM, 64X16, Serial, CMOS, PDIP8,

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IS93C46-3SPM 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：DIP, DIP8,.3Reach Compliance Code：not_compliant
风险等级：5.92Is Samacsys：N
数据保留时间-最小值：10耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDIP-T8JESD-609代码：e0
内存密度：1024 bit内存集成电路类型：EEPROM
内存宽度：16端子数量：8
字数：64 words字数代码：64
最高工作温度：125 °C最低工作温度：-55 °C
组织：64X16封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：SERIAL电源：3/5 V
认证状态：Not Qualified串行总线类型：MICROWIRE
最大待机电流：0.000002 A子类别：EEPROMs
最大压摆率：0.005 mA表面贴装：NO
技术：CMOS温度等级：MILITARY
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
写保护：SOFTWAREBase Number Matches：1

IS93C46-3SPM 数据手册

 浏览型号IS93C46-3SPM的Datasheet PDF文件第2页浏览型号IS93C46-3SPM的Datasheet PDF文件第3页浏览型号IS93C46-3SPM的Datasheet PDF文件第4页浏览型号IS93C46-3SPM的Datasheet PDF文件第5页浏览型号IS93C46-3SPM的Datasheet PDF文件第6页浏览型号IS93C46-3SPM的Datasheet PDF文件第7页 
®
IS93C46-3  
1,024-BIT SERIAL ELECTRICALLY  
ERASABLE PROM  
ISSI  
MARCH 2001  
FEATURES  
OVERVIEW  
• State-of-the-artarchitecture  
— Non-volatile data storage  
The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial  
E2PROM. It is fabricated using ISSI’s advanced CMOS  
E2PROM technology. The IS93C46-3 provides efficient  
non-volatile read/write memory arranged as 64 registers  
of 16 bits each. Seven 9-bit instructions control the  
operation of the device, which includes read, write, and  
mode enable functions. The data out pin (DOUT) indicates  
the status of the device during in the self-timed non-  
volatile programming cycle.  
— Low voltage operation:  
3.0V (Vcc = 2.7V to 6.0V)  
— Full TTL compatible inputs and outputs  
— Auto increment for efficient data dump  
• Low voltage read operation  
— Down to 2.7V  
• Hardware and software write protection  
— Defaults to write-disabled state at power-up  
— Softwareinstructionsforwrite-enable/disable  
• Advanced low voltage CMOS E2PROM  
technology  
• Versatile, easy-to-useInterface  
— Self-timedprogrammingcycle  
— Automaticerase-before-write  
— Programming status indicator  
— Word and chip erasable  
The self-timed write cycle includes an automatic erase-  
before-write capability. To protect against inadvertent  
writes, the WRITE instruction is accepted only while the  
chip is in the write enabled state. Data is written in 16 bits  
per write instruction into the selected register. If Chip  
Select (CS) is brought HIGH after initiation of the write  
cycle, the Data Output (DOUT) pin will indicate the READY/  
BUSY status of the chip.  
APPLICATIONS  
The IS93C46-3 is ideal for high-volume applications  
requiring low power and low density storage. This device  
uses a low cost, space saving 8-pin package. Candidate  
applications include robotics, alarm devices, electronic  
locks, meters and instrumentation settings.  
— Stop SK anytime for power savings  
• Durable and reliable  
— 10-year data retention after 100K write cycles  
— 100,000 write cycles  
— Unlimited read cycles  
FUNCTIONAL BLOCK DIAGRAM  
DUMMY  
BIT  
DOUT  
DATA  
REGISTER  
(16 BITS)  
INSTRUCTION  
REGISTER  
(9 BITS)  
R/W  
AMPS  
DIN  
EEPROM  
ADDRESS  
REGISTER  
INSTRUCTION  
DECODE,  
CONTROL,  
AND  
1 OF 64  
DECODER  
ARRAY  
CS  
(64 X 16)  
CLOCK  
SK  
GENERATION  
HIGH VOLTAGE  
GENERATOR  
WRITE  
ENABLE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. G  
1
04/26/01  
1234567...10

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