Datasheet > 存储 > EEPROM> IS93C46-3GRI

IS93C46-3GRI

更新时间： 2024-02-17 06:03:12

品牌	Logo	应用领域
美国芯成 - ISSI		存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
10页	85K
描述
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

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技术参数
数据手册

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IS93C46-3GRI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	DIP, DIP8,.3	Reach Compliance Code：	not_compliant
风险等级：	5.92	Is Samacsys：	N
数据保留时间-最小值：	10	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDIP-T8	JESD-609代码：	e0
内存密度：	1024 bit	内存集成电路类型：	EEPROM
内存宽度：	16	端子数量：	8
字数：	64 words	字数代码：	64
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	64X16	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP8,.3
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	SERIAL	电源：	3/5 V
认证状态：	Not Qualified	串行总线类型：	MICROWIRE
最大待机电流：	0.000002 A	子类别：	EEPROMs
最大压摆率：	0.005 mA	表面贴装：	NO
技术：	CMOS	温度等级：	MILITARY
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
写保护：	SOFTWARE	Base Number Matches：	1

IS93C46-3GRI 数据手册

IS93C46-3

1,024-BIT SERIAL ELECTRICALLY

ERASABLE PROM

ISSI

MARCH 2001

FEATURES

OVERVIEW

• State-of-the-artarchitecture

— Non-volatile data storage

The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial

E²PROM. It is fabricated using ISSI’s advanced CMOS

E²PROM technology. The IS93C46-3 provides efficient

non-volatile read/write memory arranged as 64 registers

of 16 bits each. Seven 9-bit instructions control the

operation of the device, which includes read, write, and

mode enable functions. The data out pin (DOUT) indicates

the status of the device during in the self-timed non-

volatile programming cycle.

— Low voltage operation:

3.0V (Vcc = 2.7V to 6.0V)

— Full TTL compatible inputs and outputs

— Auto increment for efficient data dump

• Low voltage read operation

— Down to 2.7V

• Hardware and software write protection

— Defaults to write-disabled state at power-up

— Softwareinstructionsforwrite-enable/disable

• Advanced low voltage CMOS E²PROM

technology

• Versatile, easy-to-useInterface

— Self-timedprogrammingcycle

— Automaticerase-before-write

— Programming status indicator

— Word and chip erasable

The self-timed write cycle includes an automatic erase-

before-write capability. To protect against inadvertent

writes, the WRITE instruction is accepted only while the

chip is in the write enabled state. Data is written in 16 bits

per write instruction into the selected register. If Chip

Select (CS) is brought HIGH after initiation of the write

cycle, the Data Output (D^OUT) pin will indicate the READY/

BUSY status of the chip.

APPLICATIONS

The IS93C46-3 is ideal for high-volume applications

requiring low power and low density storage. This device

uses a low cost, space saving 8-pin package. Candidate

applications include robotics, alarm devices, electronic

locks, meters and instrumentation settings.

— Stop SK anytime for power savings

• Durable and reliable

— 10-year data retention after 100K write cycles

— 100,000 write cycles

— Unlimited read cycles

FUNCTIONAL BLOCK DIAGRAM

DUMMY

BIT

DOUT

DATA

(16 BITS)

INSTRUCTION

(9 BITS)

R/W

AMPS

DIN

EEPROM

ADDRESS

INSTRUCTION

DECODE,

CONTROL,

AND

1 OF 64

DECODER

ARRAY

(64 X 16)

CLOCK

GENERATION

HIGH VOLTAGE

GENERATOR

WRITE

ENABLE

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

12 3 4 5 6 7...10

中文翻译

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与IS93C46-3GRI相关器件

型号	品牌	获取价格	描述	数据表
IS93C46-3P	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46-3PI	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46-3SJ	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDSO8,
IS93C46-3SJM	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDSO8,
IS93C46-3SP	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDIP8,
IS93C46-3SPI	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDIP8
IS93C46-3SPM	ISSI	获取价格	EEPROM, 64X16, Serial, CMOS, PDIP8,
IS93C46A	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3G	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C46A-3GI	ISSI	获取价格	1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

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