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IS62LV256L-15T PDF预览

IS62LV256L-15T

更新时间: 2024-02-06 14:50:41
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
7页 56K
描述
32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS62LV256L-15T 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:TSSOP, TSSOP28,.53,22Reach Compliance Code:unknown
风险等级:5.86最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.0001 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.07 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
Base Number Matches:1

IS62LV256L-15T 数据手册

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®
ISSI  
IS62LV256L  
32K x 8 LOW VOLTAGE  
CMOS STATIC RAM  
APRIL 1999  
FEATURES  
DESCRIPTION  
The ISSI IS62LV256L is a very high-speed, low power,  
32,768-word by 8-bit static RAM. It is fabricated using ISSI's  
high-performance CMOS technology. This highly reliable pro-  
cess coupled with innovative circuit design techniques, yields  
access times as fast as 15 ns maximum.  
• High-speed access time: 15, 20, 25 ns  
• Automatic power-down when chip is deselected  
• CMOS low power operation  
— 255 mW (max.) operating  
— 0.18 mW (max.) CMOS standby  
• TTL compatible interface levels  
• Single 3.3V power supply  
WhenCEisHIGH(deselected),thedeviceassumesastandby  
mode at which the power dissipation is reduced to  
50 µW (typical) with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using an active LOW  
ChipEnable(CE).TheactiveLOWWriteEnable(WE)controls  
both writing and reading of the memory.  
• Three-state outputs  
The IS62LV256L is available in the JEDEC standard 28-pin  
SOJ and the 450-mil TSOP package.  
FUNCTIONAL BLOCK DIAGRAM  
256 X 1024  
MEMORY ARRAY  
A0-A14  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which  
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc.  
SR033-1A  
04/27/99  
1

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