IS62LV5128LL-70BI

更新时间： 2024-09-30 21:54:19

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
10页	63K
描述
512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

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IS62LV5128LL-70BI 数据手册

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IS62LV5128LL

512K x 8 LOW POWER and LOW Vcc

CMOS STATIC RAM

ISSI

MAY 2001

FEATURES

DESCRIPTION

• Access times of 70, 85 ns

The ISSI IS62LV5128LL is a low voltage, 524,288 words by

• CMOS low power operation:

— 135 mW (typical) operating

— 16.5 µW (typical) standby

8bits,CMOSSRAM.ItisfabricatedusingISSI’slowvoltage,

sixtransistor(6T),CMOStechnology.Thedeviceistargetedto

satisfy the demands of the state-of-the-art technologies

such as cell phones and pagers.

• Low data retention voltage: 2V (min.)

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be reduced

down with CMOS input levels. Additionally, easy memory

expansion is provided by using Chip Enable and Output

Enable inputs, CE and OE. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

• Output Enable (OE) and Chip Enable

(CE) inputs for ease in applications

• TTL compatible inputs and outputs

• Fully static operation:

— No clock or refresh required

The IS62LV5128LL is available in a 36-pin mini BGA

package (8mm x 10mm).

•

Single2.7V(min)to3.15V(max)VCCpowersupply

• Availablein36-pinminiBGA

FUNCTIONAL BLOCK DIAGRAM

512K x 8

MEMORY ARRAY

A0-A18

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

05/04/01

12 3 4 5 6 7...10

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