Datasheet > IS62LV5128L-10BI

IS62LV5128L-10BI

更新时间： 2024-09-30 23:59:47

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
10页	63K
描述
x8 SRAM

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中文翻译

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数据手册

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IS62LV5128L-10BI 数据手册

IS62LV5128L

IS62LV5128LL

512K x 8 LOW POWER and LOW Vcc

CMOS STATIC RAM

ISSI

MAY 2000

FEATURES

DESCRIPTION

• Access times of 70, 85 and 100 ns

The ISSI IS62LV5128L and IS62LV5128LL is a low

• CMOS low power operation:

— 120 mW (typical) operating

— 6 µW (typical) standby

voltage, 524,288 words by 8 bits, CMOS SRAM. It is

fabricated using ISSI’s low voltage, six transistor (6T),

CMOS technology. The device is targeted to satisfy the

demands of the state-of-the-art technologies such as

cell phones and pagers.

• Low data retention voltage: 2V (min.)

• Output Enable (OE) and Chip Enable

(CE) inputs for ease in applications

When CE is HIGH (deselected), the device assumes a

standbymodeatwhichthepowerdissipationcanbereduced

down with CMOS input levels. Additionally, easy memory

expansion is provided by using Chip Enable and Output

Enable inputs, CE and OE. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

• TTL compatible inputs and outputs

• Fully static operation:

— No clock or refresh required

• Single 2.5V to 3.3V power supply

• Available in 36-pin mini BGA

The IS62LV5128L and IS62LV5128LL are available in a

36-pin mini BGA package.

FUNCTIONAL BLOCK DIAGRAM

512K x 8

MEMORY ARRAY

A0-A18

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

06/01/00

12 3 4 5 6 7...10

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