Datasheet > IS61WV102416FALL-20T2LI

IS61WV102416FALL-20T2LI

更新时间： 2024-01-03 10:03:05

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
19页	711K
描述
Standard SRAM, 1MX16, 20ns, CMOS, PDSO54, TSOP2-54

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IS61WV102416FALL-20T2LI 技术参数

生命周期：	Active	包装说明：	TSOP2,
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.41
风险等级：	5.66	最长访问时间：	20 ns
JESD-30 代码：	R-PDSO-G54	长度：	22.22 mm
内存密度：	16777216 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	16	功能数量：	1
端子数量：	54	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP2	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	2.2 V
最小供电电压 (Vsup)：	1.65 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	0.8 mm	端子位置：	DUAL
宽度：	10.16 mm	Base Number Matches：	1

IS61WV102416FALL-20T2LI 数据手册

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IS61WV102416FALL

IS61/64WV102416FBLL

PRELIMINARY INFORMATION

DECEMBER 2016

1Mx16 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES

The ISSI IS61/64WV102416FALL/BLL are high-speed, 16M

bit static RAMs organized as 1024K words by 16 bits. It is

fabricated using ISSI's high-performance CMOS technology.



High-speed access time: 8ns, 10ns, 20ns

High- performance, low power CMOS process

Multiple center power and ground pins for

greater noise immunity

This highly reliable process coupled with innovative circuit

design techniques, yields high-performance and low power

consumption devices.



TTL compatible inputs and outputs

Single power supply

–

1.65V-2.2V VDD (IS61WV102416FALL)

2.4V-3.6V VDD (IS61/64WV102416FBLL)

When CS# is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be reduced

down with CMOS input levels. Easy memory expansion is

provided by using Chip Enable and Output Enable inputs.

The active LOW Write Enable (WE#) controls both writing

and reading of the memory.



Packages available :

- 48 ball mini BGA (6mm x 8mm)

- 48 pin TSOP (Type I)

- 54 pin TSOP (Type II)

A data byte allows Upper Byte (UB#) and Lower Byte (LB#)

access.

Industrial and Automotive temperature support

Lead-free available

Data Control for upper and lower bytes



The devices are packaged in the JEDEC standard 48-Pin

TSOP (TYPE I), 48-pin mini BGA (6mm x 8mm), and 54-Pin

TSOP (TYPE II) .

DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

1024K x 16

MEMORY

ARRAY

DECODER

A0 – A19

VDD

GND

I/O

I/O0 – I/O7

COLUMN I/O

DATA

CIRCUIT

I/O8 – I/O15

CS# or

CS1#/CS2

CONTROL

CIRCUIT

OE#

WE#

UB#

LB#

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. 0A

12/13/2016

12 3 4 5 6 7...19

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与IS61WV102416FALL-20T2LI相关器件

型号	品牌	描述	获取价格	数据表
IS61WV102416FALL-20TLI	ISSI	Standard SRAM, 1MX16, 20ns, CMOS, PDSO48, TSOP1-48	获取价格
IS61WV102416FBLL-10BLI	ISSI	Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, MINIBGA-48	获取价格
IS61WV102416FBLL-10T2LI	ISSI	Standard SRAM, 1MX16, 10ns, CMOS, PDSO54, TSOP2-54	获取价格
IS61WV102416FBLL-10T2LI-TR	ISSI	Standard SRAM,	获取价格
IS61WV102416FBLL-10TLI	ISSI	Standard SRAM, 1MX16, 10ns, CMOS, PDSO48, TSOP1-48	获取价格
IS61WV102416FBLL-8TLI-TR	ISSI	Standard SRAM,	获取价格

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