是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | QFP | 包装说明: | LQFP, QFP100,.63X.87 |
针数: | 100 | Reach Compliance Code: | not_compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.88 | Is Samacsys: | N |
最长访问时间: | 8 ns | 最大时钟频率 (fCLK): | 66 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PQFP-G100 |
JESD-609代码: | e0 | 长度: | 20 mm |
内存密度: | 2097152 bit | 内存集成电路类型: | CACHE SRAM |
内存宽度: | 32 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 100 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 64KX32 | |
输出特性: | 3-STATE | 可输出: | YES |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LQFP |
封装等效代码: | QFP100,.63X.87 | 封装形状: | RECTANGULAR |
封装形式: | FLATPACK, LOW PROFILE | 并行/串行: | PARALLEL |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最大待机电流: | 0.005 A |
最小待机电流: | 3.14 V | 子类别: | SRAMs |
最大压摆率: | 0.14 mA | 最大供电电压 (Vsup): | 3.63 V |
最小供电电压 (Vsup): | 3.135 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | QUAD | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS61S6432-8TQI | ICSI |
获取价格 |
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM |
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IS61S6432-8TQI | ISSI |
获取价格 |
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM |
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IS61S6432N-133TQ | ISSI |
获取价格 |
Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100 |
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IS61S6432N-133TQI | ISSI |
获取价格 |
Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100 |
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IS61SF12832 | ISSI |
获取价格 |
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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IS61SF12832-10B | ISSI |
获取价格 |
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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IS61SF12832-10TQ | ISSI |
获取价格 |
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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IS61SF12832-10TQI | ISSI |
获取价格 |
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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IS61SF12832-12B | ISSI |
获取价格 |
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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IS61SF12832-12TQ | ISSI |
获取价格 |
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM |
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