Datasheet > 存储 > SRAM> IS61LV12824-10BL

IS61LV12824-10BL

更新时间： 2024-11-23 22:48:03

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
13页	77K
描述
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IS61LV12824-10BL 数据手册

IS61LV12824

128K x 24 HIGH-SPEED CMOS STATIC RAM

WITH 3.3V SUPPLY

ISSI

JUNE 2005

FEATURES

DESCRIPTION

TheISSIIS61LV12824isahigh-speed, staticRAMorganized

as 131,072 words by 24 bits. It is fabricated using ISSI's high-

performance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields ac-

cess times as fast as 8 ns with low power consumption.

• High-speed access time: 8, 10 ns

• CMOS low power operation

— 756 mW (max.) operating @ 8 ns

— 36 mW (max.) standby @ 8 ns

• TTL compatible interface levels

• Single 3.3V power supply

When CE1, CE2 are HIGH and CE2 is LOW (deselected), the

device assumes a standby mode at which the power dissipa-

tion can be reduced down with CMOS input levels.

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable

andOutputEnableinputs,CE1, CE2, CE2and OE. Theactive

LOW Write Enable (WE) controls both writing and reading of

the memory.

• Three state outputs

• Available in 119-pin Plastic Ball Grid Array

(PBGA) and 100-pin TQFP packages.

• Industrial temperature available

• Lead-free available

The IS61LV12824 is packaged in the JEDEC standard

119-pin PBGA and 100-pin TQFP.

FUNCTIONAL BLOCK DIAGRAM

128K x 24

MEMORY ARRAY

A0-A16

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O23

CIRCUIT

CE2

CE1

CE2

CONTROL

CIRCUIT

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/22/05

12 3 4 5 6 7...13

中文翻译

下载PDF

IS61LV12824-10BL 替代型号

型号	品牌	替代类型	描述	数据表
IS61LV12824-10B	ISSI	完全替代	128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

与IS61LV12824-10BL相关器件

型号	品牌	获取价格	描述	数据表
IS61LV12824-10TQ	ISSI	获取价格	128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQI	ISSI	获取价格	128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-10TQLI	ISSI	获取价格	128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824-12B	ETC	获取价格	x24 SRAM
IS61LV12824-12BI	ETC	获取价格	x24 SRAM
IS61LV12824-12TQ	ETC	获取价格	x24 SRAM
IS61LV12824-12TQI	ETC	获取价格	x24 SRAM
IS61LV12824-15B	ISSI	获取价格	Standard SRAM, 128KX24, 15ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LV12824-15BI	ISSI	获取价格	Standard SRAM, 128KX24, 15ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61LV12824-15TQ	ISSI	获取价格	Standard SRAM, 128KX24, 15ns, CMOS, PQFP100, TQFP-100

与IS61LV12824-10BL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LV12824-10BL

IS61LV12824-10BL 数据手册

IS61LV12824-10BL 替代型号

与IS61LV12824-10BL相关器件

与IS61LV12824-10BL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS61LV12824-10BL

IS61LV12824-10BL 数据手册

IS61LV12824-10BL 替代型号

与IS61LV12824-10BL相关器件

与IS61LV12824-10BL相关文章

您还可以找

您在本页遇到什么问题？