Datasheet > IS42S32400L-7BI

IS42S32400L-7BI

更新时间： 2024-11-25 07:56:15

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
64页	540K
描述
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, BGA-90

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS42S32400L-7BI 数据手册

IS42S16800L

IS42S32400L

ISSI

8Meg x16 & 4Meg x 32 (128-MBIT)

PowerSaver SYNC DYNAMIC RAM

ADVANCEDINFORMATION

SEPTEMBER 2002

OVERVIEW

FEATURES

ISSI's 128Mb Synchronous DRAM IS42S16800L is

organized as 2Meg x16 x 4 banks (8 Meg x16) and the

IS42S32400Lisorganizedas1Megx32x4banks(4Megx

32) . The synchronous DRAMs achieve high-speed data

transfer using pipeline architecture. All inputs and outputs

signals refer to the rising edge of the clock input.

• Clock frequency: 143, 100, MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

V^DD= 2.5V/ +/-10%

V^DDq= 1.8V (2.5V tolerant)

• LVTTL interface

Package:

54-Ball FBGA for x16

54 Pin TSOPII for x16

90-Ball FBGA for x32

86-Pin TSOPII for x32

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• Extended Mode Register

• Programmable Power Reduction Feature by

partial array activation during Self-Refresh

KEY TIMING PARAMETERS

• Auto Refresh (CBR)

• Temp. Compensated Self Refresh.

• Self Refresh with programmable refresh periods

• 4096 refresh cycles every 64 ms

Parameter

-7

-10 Unit

Clk Cycle Time

CAS Latency = 3

CAS Latency = 2

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

Clk Frequency

CAS Latency = 3

CAS Latency = 2

143

100

Mhz

• Burst read/write and burst read/single write

operations capability

Access Time from Clock

CAS Latency = 3

5.4

• Burst termination by burst stop and precharge

command

CAS Latency = 2

Row to Column Delay Time (tRCD)

Row Precharge Tim (tRP)

• Industrial Temperature Availability

• Bare and Known Good Die

time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are

advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00B

09/24/02

12 3 4 5 6 7...64

中文翻译

下载PDF

与IS42S32400L-7BI相关器件

型号	品牌	获取价格	描述	数据表
IS42S32400L-7T	ISSI	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, TSOP2-86
IS42S32400L-7TI	ISSI	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, TSOP2-86
IS42S32800	ISSI	获取价格	Concurrent auto precharge
IS42S32800-6BL	ISSI	获取价格	Concurrent auto precharge
IS42S32800-6BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90
IS42S32800-6TL	ISSI	获取价格	Concurrent auto precharge
IS42S32800-6TLI	ISSI	获取价格	Concurrent auto precharge
IS42S32800-7BL	ISSI	获取价格	Concurrent auto precharge
IS42S32800-7BLI	ISSI	获取价格	Concurrent auto precharge
IS42S32800-7TL	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-

与IS42S32400L-7BI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S32400L-7BI

IS42S32400L-7BI 数据手册

与IS42S32400L-7BI相关器件

与IS42S32400L-7BI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S32400L-7BI

IS42S32400L-7BI 数据手册

与IS42S32400L-7BI相关器件

与IS42S32400L-7BI相关文章

您还可以找

您在本页遇到什么问题？