Datasheet > IS42S32800

IS42S32800

更新时间： 2024-11-25 01:00:39

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
62页	1159K
描述
Concurrent auto precharge

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数据手册

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IS42S32800 数据手册

IS42S32800

2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM

JANUARY 2008

DESCRIPTION

FEATURES

The ISSI IS42S32800 is a high-speed CMOS con-

ﬁgured as a quad 2M x 32 DRAM with asynchronous

interface (all signals are registered on the positive

edge of the clock signal, CLK). Each of the 2M x 32 bit

banks is organized as 4096 rows by 512 columns by

32 bits. Read and write accesses start at a selected

locations in a programmed sequence. Accesses begin

with the registration of a BankActive command which

is then followed by a Read or Write command. The

ISSI IS42S32800 provides for programmable Read or

Write burst lengths of 1,2,4,8,or full page, with a burst

termination operation. An auto precharge function may

be enable to provide a self-timed row precharge that is

initiated at the end of the burst sequence. The refresh

functions, either Auto or Self Refresh are easy to use.

By having a programmable mode register, the system

can choose the most suitable modes to maximize its

performance. These devices are well suited for applica-

tions requiring high memory bandwidth.

•ꢀ Concurrent auto precharge

•ꢀ Clock rate:166/143 MHz

•ꢀ Fully synchronous operation

•ꢀ Internal pipelined architecture

•ꢀ Four internal banks (2M x 32bit x 4bank)

•ꢀ Programmable Mode

CAS# Latency: 2 or 3

Burst Length:1,2,4,8,or full page

Burst Type: interleaved or linear burst

Burst-Read-Single-Write

•ꢀ Burst stop function

•ꢀ Individual byte controlled by DQM0-3

•ꢀ Auto Refresh and Self Refresh

•ꢀ 4096 refresh cycles/64ms (15.6µs/row)

•ꢀ Single +3.3V 0.3V power supply

•ꢀ Interface:LVTTL

•ꢀ Package:

86 Pin TSOP-2,0.50mm Pin Pitch

8x13mm, 90 Ball BGA, Ball pitch 0.8mm

•ꢀ Pb-free package is available

•ꢀ Power Down and Deep Power Down Mode

•ꢀ Partial Array Self Refresh

•ꢀ Temperature Compensated Self Refresh

•ꢀ Output Driver Strength Selection

•ꢀ Please contact Product Manager for Mobile function

detail

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

12/19/07

12 3 4 5 6 7...62

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与IS42S32800相关器件

型号	品牌	获取价格	描述	数据表
IS42S32800-6BL	ISSI	获取价格	Concurrent auto precharge
IS42S32800-6BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, BGA-90
IS42S32800-6TL	ISSI	获取价格	Concurrent auto precharge
IS42S32800-6TLI	ISSI	获取价格	Concurrent auto precharge
IS42S32800-7BL	ISSI	获取价格	Concurrent auto precharge
IS42S32800-7BLI	ISSI	获取价格	Concurrent auto precharge
IS42S32800-7TL	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-
IS42S32800-7TLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-
IS42S32800B	ISSI	获取价格	2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6B	ISSI	获取价格	2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

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