Datasheet > IS42S16100H-6TLI

IS42S16100H-6TLI

更新时间： 2024-10-02 22:59:03

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
83页	1625K
描述
IC DRAM 16M PARALLEL 50TSOP II

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中文翻译

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数据手册
替代型号

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IS42S16100H-6TLI 数据手册

IS42S16100H

IS45S16100H

512K Words x 16 Bits x 2 Banks

16Mb SYNCHRONOUS DYNAMIC RAM

OCTOBER 2016

FEATURES

•ꢀ Clockꢀfrequency:ꢀ200,ꢀ166,ꢀ143ꢀMHz

DESCRIPTION

ISSI’sꢀ16MbꢀSynchronousꢀDRAMꢀIS42/4516100Hꢀ

isꢀorganizedꢀasꢀaꢀ524,288-wordꢀxꢀ16-bitꢀxꢀ2-bankꢀforꢀ

improvedꢀperformance.ꢀTheꢀsynchronousꢀDRAMsꢀ

achieve high-speed data transfer using pipeline

architecture. All inputs and outputs signals refer to the

rising edge of the clock input.

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

•ꢀ Twoꢀbanksꢀcanꢀbeꢀoperatedꢀsimultaneouslyꢀandꢀ

independently

•ꢀ DualꢀinternalꢀbankꢀcontrolledꢀbyꢀA11ꢀ(bankꢀselect)

•ꢀ Singleꢀ3.3Vꢀpowerꢀsupply

•ꢀ LVTTLꢀinterface

•ꢀ Programmableꢀburstꢀlengthꢀ

–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

•ꢀ 2048ꢀrefreshꢀcyclesꢀeveryꢀ32msꢀ(Com,ꢀInd,ꢀA1ꢀ

grade)ꢀorꢀ16msꢀ(A2ꢀgrade)

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀ

precharge command

•ꢀ ByteꢀcontrolledꢀbyꢀLDQMꢀandꢀUDQM

•ꢀ Packages:ꢀ400-milꢀ50-pinꢀTSOP-IIꢀandꢀ60-ballꢀ

TF-BGA

•ꢀ TemperatureꢀGrades:

Commercialꢀ(0^oC to +70^oC)

Industrialꢀ(-40^oCꢀtoꢀ+85^oC)

ꢀꢀꢀꢀAutomotiveꢀA1ꢀ(-40^oCꢀtoꢀ+85^oC)

ꢀꢀꢀꢀAutomotiveꢀA2ꢀ(-40^oCꢀtoꢀ+105^oC)

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can rea-

sonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applica-

tions unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A1

10/11/2016

12 3 4 5 6 7...83

中文翻译

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IS42S16100H-6TLI 替代型号

型号	品牌	替代类型	描述	数据表
IS42S16100E-6TLI	ISSI	类似代替	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

与IS42S16100H-6TLI相关器件

型号	品牌	获取价格	描述	数据表
IS42S16100H-6TLI-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16100H-7BL	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7BLI	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7BLI-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7BL-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7TLI	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16100H-7TLI-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16100H-7TL-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16128	ISSI	获取价格	128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16128-10T	ISSI	获取价格	128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM

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