Datasheet > IS42S16100F-7TL

IS42S16100F-7TL

更新时间： 2023-01-02 15:26:13

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器光电二极管
页数	文件大小	规格书
86页	1568K
描述
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50

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中文翻译

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数据手册

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IS42S16100F-7TL 数据手册

IS42/45S16100F, IS42VS16100F

512K Words x 16 Bits x 2 Banks

16Mb SDRAM

JUNE 2012

FEATURES

DESCRIPTION

•ꢀ Clockꢀfrequency:ꢀ

ISSI’sꢀ16MbꢀSynchronousꢀDRAMꢀIS42S16100F,ꢀ

IS45S16100FꢀandꢀIS42VS16100Fꢀareꢀeachꢀorganizedꢀ

asꢀaꢀ524,288-wordꢀxꢀ16-bitꢀxꢀ2-bankꢀforꢀimprovedꢀ

performance.ꢀTheꢀsynchronousꢀDRAMsꢀachieveꢀhigh-

speedꢀdataꢀtransferꢀusingꢀpipelineꢀarchitecture.ꢀAllꢀ

inputsꢀandꢀoutputsꢀsignalsꢀreferꢀtoꢀtheꢀrisingꢀedgeꢀofꢀtheꢀ

clockꢀinput.

ꢀ IS42/45S16100F:ꢀ200,ꢀ166,ꢀ143ꢀMHzꢀ

IS42VS16100F:ꢀ133,ꢀ100ꢀMHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positiveꢀclockꢀedge

•ꢀ Twoꢀbanksꢀcanꢀbeꢀoperatedꢀsimultaneouslyꢀandꢀ

independently

ADDRESS TABLE

Parameter

•ꢀ DualꢀinternalꢀbankꢀcontrolledꢀbyꢀA11ꢀꢀ

(bankꢀselect)

IS42/45S16100F IS42VS16100F

PowerꢀSupplyꢀV^dd/Vddq

RefreshꢀCount

3.3V

1.8V

•ꢀ Singleꢀpowerꢀsupply:ꢀ

2K/32ms

IS42/45S16100F:ꢀV^dd/Vddqꢀ=ꢀ3.3V

IS42VS16100F:ꢀV^dd/Vddqꢀ=ꢀ1.8V

RowꢀꢀAddressing

ColumnꢀAddressing

BankꢀAddressing

PrechargeꢀAddressing

A0-A10

A0-A7

A11

•ꢀ LVTTLꢀinterface

•ꢀ Programmableꢀburstꢀlengthꢀꢀ

–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)

A10

•ꢀ Programmableꢀburstꢀsequence:ꢀꢀ

Sequential/Interleave

KEY TIMING PARAMETERS

•ꢀ 2048ꢀrefreshꢀcyclesꢀeveryꢀ32ꢀms

Parameter

-5⁽¹⁾

-6⁽²⁾-7 ⁽²⁾-75 ⁽³⁾-10 ⁽³⁾Unit

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)

CLK Cycle Time

CAS Latency = 3

CAS Latency = 2

CLK Frequency

CAS Latency = 3

CAS Latency = 2

7.5

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀꢀ

operationsꢀcapability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀꢀ

prechargeꢀcommand

200 166 143

100 100 100

133

100

100 Mhz

Mhz

•ꢀ ByteꢀcontrolledꢀbyꢀLDQMꢀandꢀUDQM

Access Time from

Clock

•ꢀ Packagesꢀ400-milꢀ50-pinꢀTSOP-IIꢀandꢀ60-ballꢀ

BGA

CAS Latency = 3

CAS Latency = 2

5.5

•ꢀ Lead-freeꢀpackageꢀoption

•ꢀ AvailableꢀinꢀIndustrialꢀꢀTemperature

Notes:

1. Available for IS42S16100F only

2. Available for IS42S16100F and IS45S16100F only

3. Available for IS42VS16100F only

notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀ

latestꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀ

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-

ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ

unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances

Integrated Silicon Solution, Inc. — www.issi.com ꢀ

Rev. A

06/13/2012

12 3 4 5 6 7...86

中文翻译

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与IS42S16100F-7TL相关器件

型号	品牌	获取价格	描述	数据表
IS42S16100H-6BL-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-6TL	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16100H-6TLI	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16100H-6TLI-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16100H-7BL	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7BLI	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7BLI-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7BL-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 60TFBGA
IS42S16100H-7TLI	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II
IS42S16100H-7TLI-TR	ISSI	获取价格	IC DRAM 16M PARALLEL 50TSOP II

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