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IS42R16320D-7BL-TR PDF预览

IS42R16320D-7BL-TR

更新时间: 2023-01-03 04:44:09
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
66页 1332K
描述
Cache DRAM Module, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-207, TFBGA-54

IS42R16320D-7BL-TR 数据手册

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IS42/45R86400D/16320D/32160D  
IS42/45S86400D/16320D/32160D  
16Mx32, 32Mx16, 64Mx8  
512Mb SdRAM  
PRELiMiNARY iNFORMATiON  
JUNE 2011  
PAcKAGE iNFORMATiON  
FEATURES  
iS42/45S32160d iS42/45S16320d iS42/45S86400d  
•ꢀ Clockꢀfrequency:ꢀ200,ꢀ166,ꢀ143ꢀꢀMHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positiveꢀclockꢀedge  
iS42/45R32160d iS42/45R16320d iS42/45R86400d  
4Mꢀxꢀ32ꢀxꢀ4ꢀ  
banks  
8Mꢀxꢀ16ꢀxꢀ4ꢀꢀ  
banks  
16Mꢀxꢀ8ꢀxꢀ4ꢀꢀ  
banks  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ Powerꢀsupply:ꢀVdd/Vddq = 2.3V-3.6V  
ꢀ IS42/45SxxxxxDꢀ-ꢀVdd/Vddq = 3.3Vꢀ  
ꢀ IS42/45RxxxxxDꢀ-ꢀVdd/Vddq = 2.5ꢀꢀꢀ  
•ꢀ LVTTLꢀinterface  
•ꢀ Programmableꢀburstꢀlengthꢀꢀ  
–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)  
•ꢀ Programmableꢀburstꢀsequence:ꢀꢀ  
Sequential/Interleaveꢀ  
90-ballꢀTF-BGA  
54-pinꢀTSOP-II  
54-ballꢀTF-BGA  
54-pinꢀTSOP-II  
KEY TiMiNG PARAMETERS  
Parameter  
ClkꢀCycleꢀTimeꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ  
-5  
-6  
-7  
7ꢀ  
7.5ꢀ  
Unꢀt  
nsꢀ  
ns  
ꢀꢀ  
5ꢀ  
10ꢀ  
6ꢀ  
10ꢀ  
ClkꢀFrequencyꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
200ꢀ  
100ꢀ  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ SelfꢀRefresh  
167ꢀ  
100ꢀ  
143ꢀ  
133ꢀ  
Mhzꢀ  
Mhz  
AccessꢀTimeꢀꢀfromꢀClockꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ3ꢀ  
ꢀ CASꢀLatencyꢀ=ꢀ2ꢀ  
•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)  
5.0ꢀ  
6ꢀ  
5.4ꢀ  
6ꢀ  
5.4ꢀ  
5.4ꢀ  
nsꢀ  
ns  
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀꢀ  
operationsꢀcapability  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
command  
AddRESS TABLE  
Parameter  
16M x 32  
32M x 16  
64M x 8  
Configuration 4Mꢀxꢀ32ꢀxꢀ4ꢀ  
8Mꢀxꢀ16ꢀxꢀ4ꢀꢀ 16Mꢀxꢀ8ꢀxꢀ4ꢀꢀ  
banks  
•ꢀ Packages:ꢀꢀ  
banks  
BankꢀAddressꢀ BA0,ꢀBA1  
Pins  
banks  
x8/x16:ꢀ54-pinꢀTF-TSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)  
x32:ꢀ90-ballꢀTF-BGA  
BA0,ꢀBA1  
BA0,ꢀBA1  
•ꢀ TemperatureꢀRange:ꢀ  
Autoprechargeꢀ A10/AP  
Pins  
A10/AP  
A10/AP  
Commercialꢀ(0oCꢀtoꢀ+70oC)  
Industrialꢀ(-40oCꢀtoꢀ+85oC)  
Automotive,ꢀA1ꢀ(-40oCꢀtoꢀ+85oC)  
RowꢀAddress 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)  
Columnꢀ  
512(A0ꢀ–ꢀA8) 1K(A0ꢀ–ꢀA9)  
2K(A0ꢀ–ꢀA9,ꢀ  
A11)  
Automotive,ꢀA2ꢀ(-40oCꢀtoꢀ+105oC)  
Address  
RefreshꢀCountꢀ  
Com./Ind./A1ꢀ 8Kꢀ/ꢀ64msꢀ  
A2 8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64msꢀ  
8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64msꢀ  
8Kꢀ/ꢀ16ms  
dEvicE OvERviEW  
ISSI'sꢀ512MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ  
dataꢀtransferꢀusingꢀpipelineꢀarchitecture.ꢀꢀAllꢀinputsꢀandꢀ  
outputsꢀsignalsꢀreferꢀꢀtoꢀtheꢀrisingꢀedgeꢀofꢀtheꢀclockꢀinput.ꢀ  
Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ  
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwith-  
outꢀnotice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀ  
theꢀlatestꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀ  
reasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀap-  
plicationsꢀunlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
1
Rev.ꢀ00B  
06/09/2011  

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