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IRLI620G PDF预览

IRLI620G

更新时间： 2024-09-17 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
8页 1232K
描述
Power MOSFET

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中文翻译

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IRLI620G 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.08其他特性：LOGIC LEVEL COMPATIBLE
外壳连接：ISOLATED配置：SINGLE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：4 A
最大漏极电流 (ID)：4.1 A最大漏源导通电阻：0.8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：30 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRLI620G 数据手册

 浏览型号IRLI620G的Datasheet PDF文件第2页浏览型号IRLI620G的Datasheet PDF文件第3页浏览型号IRLI620G的Datasheet PDF文件第4页浏览型号IRLI620G的Datasheet PDF文件第5页浏览型号IRLI620G的Datasheet PDF文件第6页浏览型号IRLI620G的Datasheet PDF文件第7页 
IRLI620G, SiHLI620G  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Isolated Package  
PRODUCT SUMMARY  
VDS (V)  
200  
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;  
f = 60 Hz)  
Available  
RDS(on) (Ω)  
VGS = 5.0 V  
0.80  
RoHS*  
Qg (Max.) (nC)  
16  
2.7  
COMPLIANT  
• Sink to Lead Creepage Dist. 4.8 mm  
Q
Q
gs (nC)  
gd (nC)  
• Logic-Level Gate Drive  
• RDS(on) Specified at VGS = 4V and 5 V  
• Fast Switching  
9.6  
Configuration  
Single  
• Ease of paralleling  
D
TO-220 FULLPAK  
• Lead (Pb)-free Available  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 FULLPAK eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The molding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. This isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
FULLPAK is mounted to a heatsink using a single clip or by  
a single screw fixing.  
S
N-Channel MOSFET  
S
D
G
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRLI620GPbF  
SiHLI620G-E3  
IRLI620G  
Lead (Pb)-free  
SnPb  
SiHLI620G  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
200  
10  
V
TC = 25 °C  
TC =100°C  
4.0  
2.6  
16  
Continuous Drain Current  
VGS at 5.0 V  
ID  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.24  
62  
4.0  
3.0  
30  
5.0  
W/°C  
mJ  
A
mJ  
W
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
EAR  
PD  
dV/dt  
TJ, Tstg  
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TC = 25 °C  
V/ns  
- 55 to + 150  
300d  
°C  
for 10 s  
10  
1.1  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 5.8 mH, RG = 25 Ω, IAS = 4.0 A (see fig. 12).  
c. ISD ≤ 5.2 A, dI/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91312  
S-Pending-Rev. A, 17-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  
12345678

中文翻译

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IRLI620G-003 VISHAY

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IRLI620G-003PBF VISHAY

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IRLI620G-004 VISHAY

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 		Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRLI620G-004PBF VISHAY

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 		Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRLI620G-005 VISHAY

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 		Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRLI620G-005PBF VISHAY

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 		Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRLI620G-006 VISHAY

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 		Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRLI620G-006PBF VISHAY

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 		Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRLI620G-009 VISHAY

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 		Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met

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