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IRH8130

更新时间： 2024-02-10 23:25:50
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
12页 464K
描述
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package

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中文翻译

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IRH8130 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.76其他特性：RADIATION HARDENED
雪崩能效等级（Eas）：160 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：14 A最大漏源导通电阻：0.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-204AA
JESD-30 代码：O-MBFM-P2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：ROUND封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
功耗环境最大值：75 W最大脉冲漏极电流 (IDM)：56 A
认证状态：Not Qualified表面贴装：NO
端子形式：PIN/PEG端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：113 ns
最大开启时间（吨）：150 nsBase Number Matches：1

IRH8130 数据手册

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IRH7130  
Pre-Irradiation  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
100  
—
—
—
—
V
V
= 0V, I = 1.0mA  
D
GS  
∆BV  
/∆T Temperature Coefficient of Breakdown  
0.12  
V/°C  
Reference to 25°C, I = 1.0mA  
D
DSS  
J
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
—
—
—
—
—
—
—
—
0.18  
0.20  
4.0  
—
Ω
V
V
= 12V, I =9.0A  
D
= 12V, I = 14A  
DS(on)  
GS  
➀
GS  
D
V
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
2.0  
3.3  
—
V
V
DS  
= V , I = 1.0mA  
D
GS(th)  
GS  
> 15V, I  
Ω
g
S ( )  
V
= 9.0A ➀  
DS  
= 80V ,V =0V  
fs  
DS  
V
I
25  
DSS  
DS GS  
µA  
—
250  
V
= 80V,  
DS  
= 0V, T = 125°C  
V
GS  
J
= 2V0V  
I
I
Gate-to-Source  
Leakage  
Forward—  
—
-100  
45  
100  
nA  
GSS  
GSS  
GS  
GS  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10  
V
= -20V  
Q
Q
Q
V
=12V, I =14A  
g
gs  
gd  
d(on)  
r
GS D  
V
11  
nC  
= 50V  
DS  
17  
t
t
t
t
30  
V
= 50V, I =14A  
D
DD  
V =12V, R = 7.5Ω  
GS  
120  
49  
G
ns  
Turn-Off Delay Time  
Fall Time  
d(off)  
f
64  
L
S
+ L  
Total Inductance  
—
Measured from Drain lead (6mm /0.25in.  
from package) to Source lead (6mm /0.25in.  
from package) with Source wires internally  
bonded from Source Pin to Drain Pad  
D
nH  
C
C
C
Input Capacitance  
—
—
—
1100  
310  
55  
—
—
—
V
= 0V, V = 25V  
f = 1.0MHz  
iss  
GS DS  
Output Capacitance  
pF  
oss  
rss  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings and Characteristics  
Min Typ Max Units  
Parameter  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
—
—
—
—
—
—
—
—
—
—
14  
56  
S
A
SM  
V
1.8  
370  
3.5  
V
T = 25°C, I = 14A, V  
j
= 0V ➀  
GS  
SD  
S
t
Reverse Recovery Time  
nS  
µC  
T = 25°C, I = 14A, di/dt ≤ 100A/µs  
j
F
rr  
Q
Reverse Recovery Charge  
V
DD  
≤ 50V ➀  
RR  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
R
R
Junction-to-Case  
Junction-to-Ambient  
Case-to-Sink  
—
—
—
—
—
1.67  
30  
thJC  
thJA  
thCS  
°C/W  
0.12  
—
Typical socket mount  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  
1234567...12

中文翻译

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