Datasheet > IRGC4063B

IRGC4063B

更新时间： 2024-11-28 19:50:55

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
2页	92K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IRGC4063B 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	Base Number Matches：	1

IRGC4063B 数据手册

PD - 97342

IRGC4063B

IRGC4063B IGBT Die in Wafer Form

Features

• Low V_{CE (ON)}Trench IGBT Technology

• Low switching losses

• Maximum Junction temperature 175 °C

• 5 µs SCSOA

600 V

I_C(nom)= 48A

• SquareRBSOA

• Positive V_{CE (ON)}Temperature co-efficient

• Tightparameterdistribution

VCE(on) typ. = 1.65V @

I_C(nom)@ 25°C

Motor Control IGBT

Short Circuit Rated

150mmWafer

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due

to Low V_{CE (ON)}and Low Switching losses

• RuggedtransientPerformanceforincreasedreliability

• ExcellentCurrentsharinginparalleloperation

• Low EMI

Key Electrical Characteristics (TO-247 Package)

Parameter

V_CE(on)

Description

Min

–––

600V

4.0V

–––

Typ.

1.65V

–––

Max

2.14V

–––

6.5V

150µA

± 100nA

Test Conditions

_GE= 15V, I_C= 48A, T_J=25°C

_GE= 0V, I_CES= 150µA, T_J= 25°C

_CE= V_GE, I_C= 1400µA, T_J= 25°C

_CE= 600V, V_GE= 0V, T_J= 25°C

_GE= ±20V

Static Collector-to-Emitter On-Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

Collector-to-Emitter Leakage Current

Gate-to-Emitter Leakage Current

V_(BR)CES

V_GE(th)

I_CES

I_GES

–––

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

AI- Ti - Ni- Ag (1kA°-1kA°-4kA°-6kA°)

Al, Si (4µm)

4.32 mm x 5.89 mm [0.170" x 0.232"]

150 mm

Wafer Diameter:

Wafer Thickness:

70 µm typ.

Relevant Die Mechanical Drawing Number

Minimum Street Width

01-5783

75µm

Reject Ink Dot Size

Recommended Storage Environment:

0.25 mm diameter minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

IRGP4063D

Recommended Die Attach Conditions:

Reference Packaged Part

Die Outline

06/05/06

中文翻译

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与IRGC4063B相关器件

型号	品牌	获取价格	描述	数据表
IRGC4064B	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGC4066B	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,
IRGC4069B	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGC48B120KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 0.340 X 0.345 INCH, DIE-2
IRGC49B120KB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC49B120KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC49B120UB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC49B120UBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC50B120KB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC50B120KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

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