Datasheet > IRGC5B60KB

IRGC5B60KB

更新时间： 2024-11-27 20:06:47

品牌	Logo	应用领域
英飞凌 - INFINEON		电动机控制栅晶体管
页数	文件大小	规格书
1页	14K
描述
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 150 MM, WAFER

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IRGC5B60KB 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	150 MM, WAFER	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.81
集电极-发射极最大电压：	600 V	配置：	SINGLE
JESD-30 代码：	O-XUUC-N	元件数量：	1
封装主体材料：	UNSPECIFIED	封装形状：	ROUND
封装形式：	UNCASED CHIP	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
Base Number Matches：	1

IRGC5B60KB 数据手册

PD - 94408

IRGC5B60KB

Die in Wafer Form

600V

Features

• GEN5 Non Punch Through (NPT) Technology

• Low V_CE(on)

I_C(nom)= 5A

V_{CE(on) typ.}=1.8V @

I_C(nom)@ 25°C

MotorControlIGBT

Short Circuit Rated

150mm Wafer

• 10µs Short Circuit Capability

• Square RBSOA

• Positive V_CE(on)Temperature Coefficient

Benefits

• Benchmark Efficiency for Motor Control Applications

• Rugged Transient Performance

• Excellent Current Sharing in Parallel Operation

• Qualified for Industrial Market

Reference Standard IR Package Part: IRGS5B60KD

Electrical Characteristics (Wafer Form)

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (min, max)

1.0V min, 1.25V max

600V min

TestConditions

I_C= 1A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 1mA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C= 250µA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

3.5V min, 5.5V max

10µA max

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 1.1µA max

T_J= 25°C, V_GE= +/-20V

Mechanical Data

Nominal Backmetal Composition, (Thickness)

Nominal Front Metal Composition, (Thickness)

Dimensions

Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)

99% Al/1% Si, (4µm)

0.090" x 0.115"

Wafer Diameter

150mm, with std. < 100 > flat

85µm, +/- 7µm

Wafer Thickness, Tolerance

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5513

100µm

Reject Ink Dot Size

0.25mm diameter minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300°C

Ink Dot Location

Recommended Storage Environment

Recommended Die Attach Conditions

Die Outline

2.29

[.090]

NOTES:

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

2. CONTROLLING DIMENSION: [INCH].

3. LETTER DESIGNATION:

1.30

[.051]

S = SOURCE

G = GAT E

SK = SOURCE KELVIN

IS = CURRENTSENSE

E = EMITTER

4. DIMENSIONAL TOLERANCES:

BONDING PADS: < 0.635 TOLERANCE

+ /- 0.013

< [.0250] TOLERANCE = + /- [.0005]

> 0.635 TOLERANCE + /- 0.025

EMITTER

WIDT H

1.88 2.92

[.074][.115]

LENGTH

> [.0250] TOLERANCE = + /- [.0010]

0.64

[.025]

GAT E

OVERALL DIE:

WIDTH

< 1.270 TOLERANCE = + /- 0.102

< [.050] TOLERANCE = + /- [.004]

> 1.270 TOLERANCE = + /- 0.203

> [.050] TOLERANCE = + /- [.008]

0.66

[.026]

LENGTH

www.irf.com

04/19/02

中文翻译

下载PDF

与IRGC5B60KB相关器件

型号	品牌	获取价格	描述	数据表
IRGC75B120KB	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
IRGC75B120UB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC75B120UBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
IRGC75B60KB	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 0.290 X 0.290 INCH, DIE-2
IRGC75B60KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 0.290 X 0.290 INCH, DIE-2
IRGC8B120KB	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC8B120KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 150 MM, WAFER
IRGC8B120UB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
IRGC8B60KB	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 0.115 X 0.115 INCH, DIE-2
IRGC8B60KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 0.115 X 0.115 INCH, DIE-2

与IRGC5B60KB相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

IRGC5B60KB

IRGC5B60KB 技术参数

IRGC5B60KB 数据手册

与IRGC5B60KB相关器件

与IRGC5B60KB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRGC5B60KB

IRGC5B60KB 技术参数

IRGC5B60KB 数据手册

与IRGC5B60KB相关器件

与IRGC5B60KB相关文章

您还可以找

您在本页遇到什么问题？