Datasheet > IRGC8B120UB

IRGC8B120UB

更新时间： 2024-11-26 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管
页数	文件大小	规格书
1页	18K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP

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中文翻译

获取价格

数据手册

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IRGC8B120UB 数据手册

PD-94317

IRGC8B120UB

IRGC8B120UB IGBT Die in Wafer Form

Features

• GEN5 Non Punch Through (NPT) Technology

• UltraFast

1200 V

• 10µs Short Circuit Capability

• Square RBSOA

I_C(nom)= 8A

VCE(on) typ. = 3.63V @

I_C(nom)@ 25°C

• Positive V_CE(on)Temperature Coefficient

Benefits

• Benchmark Efficiency above 20KHz

UltraFast IGBT

Short Circuit Rated

• Optimized for Welding, UPS, and Induction Heating

• Rugged with UltraFast Performance

• Excellent Current Sharing in Parallel Operation

• Qualified for Industrial Market

150mmWafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

Collector-to-Emitter Saturation Voltage

Collector-to-Emitter Breakdown Voltage

Gate Threshold Voltage

2.77V Min., 3.82V Max. I_C= 5.0A, T_J= 25°C, V_GE= 15V

1200V Min.

4.4V Min., 6.0V Max.

5.0 µA Max.

T_J= 25°C, I_CES= 100µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=125µA

T_J= 25°C, V_CE= 1200V

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 1.1 µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA )

99% Al, 1% Si (4 microns)

0.133" x 0.195"

Wafer Diameter:

150mm, with std. < 100 > flat

185 +/- 15 Microns

Wafer thickness:

Relevant Die Mechanical Dwg. Number

MinimumStreetWidth

01-5427

100 Microns

Reject Ink Dot Size

0.25mmDiameterMinimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Die Outline

3.378

[.133]

NOTES :

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

2. CONTROLLING DIMENS ION: [INCH].

3. LETTER DESIGNATION:

1.953

[.077]

S = SOURCE

G = GAT E

SK = SOURCE KELVIN

IS = CURRENT S ENS E

E = EMITTER

4. DIMENS IONAL T OLERANCES :

4.953

[.195]

BONDING PADS:

WIDT H

0.635 TOLERANCE

[.0250] TOLERANCE = + /- [.0005]

0.635 TOLERANCE + /- 0.025

[.0250] TOLERANCE = + /- [.0010]

= + /- 0.013

EMITTER

3.473

[.136]

0.696

[.027]

LENGTH

OVERALL DIE:

WIDTH

1.270 TOLERANCE

[.050] T OLERANCE = + /- [.004]

1.270 TOLERANCE + /- 0.203

[.050] TOLERANCE = + /- [.008]

= + /- 0.102

0.701

[.027]

LENGTH

10/02/01

中文翻译

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