IRGBC20M-STRLPBF

更新时间： 2024-01-25 16:39:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管双极性晶体管栅局域网
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IRGBC20M-STRLPBF 数据手册

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IRGBC20F

Electrical Characteristics @ T = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GE= 0V, I_C= 250µA

V_GE= 0V, I_C= 1.0A

V_(BR)CES

V_(BR)ECS

Collector-to-Emitter Breakdown Voltage

Emitter-to-Collector Breakdown Voltage

600

—

∆V_(BR)CES/∆T_JTemp. Coeff. of Breakdown Voltage

0.72

V/°C V_GE= 0V, I_C= 1.0mA

I_C= 9.0A

V_CE(on)

Collector-to-Emitter Saturation Voltage

—

2.0 2.8

V_GE= 15V

—

2.6

2.3

—

I_C= 16A

See Fig. 2, 5

—

I_C= 9.0A, T_J= 150°C

V_CE= V_GE, I_C= 250µA

V_GE(th)

Gate Threshold Voltage

3.0

—

5.5

—

∆V_GE(th)/∆T_JTemp. Coeff. of Threshold Voltage

-11

mV/°C V_CE= V_GE, I_C= 250µA

g_fe

Forward Transconductance

2.9 5.1

—

V_CE= 100V, I_C= 9.0A

V_GE= 0V, V_CE= 600V

I_CES

Zero Gate Voltage Collector Current

—

250

1000

±100

µA

V_GE= 0V, V_CE= 600V, T_J= 150°C

V_GE= ±20V

I_GES

Gate-to-Emitter Leakage Current

Switching Characteristics @ T = 25°C (unless otherwise specified)

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Min. Typ. Max. Units

16 21

2.4 3.4

Conditions

Q_g

—

I_C= 9.0A

Q_ge

Q_gc

t_d(on)

t_r

V_CC= 400V

V_GE= 15V

T_J= 25°C

See Fig. 8

7.8

—

I_C= 9.0A, V_CC= 480V

V_GE= 15V, R_G= 50Ω

Energy losses include "tail"

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

160 270

310 600

E_on

E_off

E_ts

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

0.18

0.90

—

mJ See Fig. 9, 10, 11, 14

T_J= 150°C,

1.08 2.0

t_d(on)

t_r

t_d(off)

t_f

—

I_C= 9.0A, V_CC= 480V

V_GE= 15V, R_G= 50Ω

Energy losses include "tail"

Turn-Off Delay Time

Fall Time

210

600

1.65

7.5

340

E_ts

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

mJ See Fig. 10, 14

L_E

Measured 5mm from package

C_ies

C_oes

C_res

V_GE= 0V

Output Capacitance

Reverse Transfer Capacitance

V_CC= 30V

ƒ = 1.0MHz

See Fig. 7

5.9

Notes:

Repetitive rating; V_GE=20V, pulse width

limited by max. junction temperature.

( See fig. 13b )

Pulse width 5.0µs,

single shot.

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

V_CC=80%(V_CES), V_GE=20V, L=10µH,

R_G= 50Ω, ( See fig. 13a )

C-52

To Order

123 4 5 6

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IRGBC20M-STRR	INFINEON	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	获取价格
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