IRFW710

更新时间： 2024-11-05 22:32:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	650K
描述
400V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFW710 数据手册

November 2001

IRFW710B / IRFI710B

400V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies and

electronic lamp ballasts based on half bridge.

•

2.0A, 400V, R

= 3.4Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 7.7 nC)

Low Crss ( typical 6.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

D²-PAK

IRFW Series

I²-PAK

IRFI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFW710B / IRFI710B

Units

Drain-Source Voltage

400

2.0

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

1.3

(Note 1)

Drain Current

- Pulsed

6.0

Gate-Source Voltage

± 30

100

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

2.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

3.6

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.29

-55 to +150

W/°C

°C

T , T

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.44

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFW710相关器件

型号	品牌	获取价格	描述	数据表
IRFW710A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal
IRFW710ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFW710B	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFW710BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal
IRFW710S	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 2A I(D) \| TO-263AB
IRFW720	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFW720A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3.3A I(D) \| TO-263AB
IRFW720B	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFW720BTM	ROCHESTER	获取价格	3.3A, 400V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
IRFW720BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Me