Datasheet > IRFR320

IRFR320

更新时间： 2024-02-16 12:38:26

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	4076K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR320 数据手册

IRFR320, IRFU320, SiHFR320, SiHFU320

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

400

Available

• Repetitive Avalanche Rated

RoHS*

• Surface Mount (IRFR320/SiHFR320)

COMPLIANT

_DS(on)(Ω)

V_GS= 10 V

1.8

Q_g(Max.) (nC)

Q_gs(nC)

3.3

• Straight Lead (IRFU320/SiHFU320)

• Available in Tape and Reel

• Fast Switching

Q_gd(nC)

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR320PbF

SiHFR320-E3

IRFR320

DPAK (TO-252)

IRFR320TRLPbF^a

SiHFR320TL-E3^a

IRFR320TRL^a

DPAK (TO-252)

IRFR320TRPbF^a

SiHFR320T-E3^a

IRFR320TR^a

DPAK (TO-252)

IRFR320TRRPbF^a

SiHFR320TR-E3^a

IRFR320TRR^a

IPAK (TO-251)

IRFU320PbF

SiHFU320-E3

IRFU320

Lead (Pb)-free

SnPb

SiHFR320

SiHFR320TL^a

SiHFR320T^a

SiHFR320TR^a

SiHFU320

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

400

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

3.1

Continuous Drain Current

V_GSat 10 V

I_D

2.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

160

3.1

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

Repetitive Avalanche Energy^a

E_AR

4.2

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

4.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 29 mH, R_G= 25 Ω, I_AS= 3.1 A (see fig. 12).

c. I_SD≤ 3.1 A, dI/dt ≤ 65 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

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与IRFR320相关器件

型号	品牌	获取价格	描述	数据表
IRFR320, IRFU320, SiHFR320, SiHFU320	VISHAY	获取价格	Power MOSFET
IRFR3209A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3.1A I(D) \| TO-252AA
IRFR320A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3.1A I(D) \| TO-252AA
IRFR320ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR320ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR320B	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFR320BTF	FAIRCHILD	获取价格	暂无描述
IRFR320BTM	ROCHESTER	获取价格	3.1A, 400V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
IRFR320BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.1A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Me
IRFR320PBF	VISHAY	获取价格	Power MOSFET

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