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IRFR3209A PDF预览

IRFR3209A

更新时间: 2024-11-25 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 118K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA

IRFR3209A 数据手册

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IRFR320, IRFU320  
Data Sheet  
January 2002  
3.1A, 400V, 1.800 Ohm, N-Channel Power  
MOSFETs  
Features  
• 3.1A, 400V  
• r = 1.800Ω  
These are N-Channel enhancement mode silicon gate  
power field effect transistors. They are advanced power  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching  
convertors, motor drivers, relay drivers, and drivers for high  
power bipolar switching transistors requiring high speed and  
low gate drive power. These types can be operated directly  
from integrated circuits.  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17404.  
Ordering Information  
Symbol  
D
PART NUMBER  
IRFR320  
IRFU320  
PACKAGE  
TO-252AA  
TO-251AA  
BRAND  
IFR320  
IFU320  
G
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-252AA variant in tape and reel, i.e., IRFR3209A.  
S
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
SOURCE  
DRAIN  
GATE  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
SOURCE  
DRAIN (FLANGE)  
©2002 Fairchild Semiconductor Corporation  
IRFR320, IRFU320 Rev. B  

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