IRFIZ24N

更新时间： 2024-11-29 22:31:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	107K
描述
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)

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IRFIZ24N 数据手册

PD - 9.1501A

IRFIZ24N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

V_DSS= 55V

R_DS(on)= 0.07Ω

Description

I_D= 14A

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial

applications. The moulding compound used provides

a high isolation capability and a low thermal resistance

between the tab and external heatsink. This isolation

is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to

a heatsink using a single clip or by a single screw

fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.19

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

2.9

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

5.2

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

8/25/97

12 3 4 5 6 7 8

中文翻译

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IRFIZ24N 替代型号

型号	品牌	替代类型	描述	数据表
IRFIZ24NPBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET

与IRFIZ24N相关器件

型号	品牌	获取价格	描述	数据表
IRFIZ24N-002	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-004	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-004PBF	INFINEON	获取价格	13A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFIZ24N-005	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-010	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-010PBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta

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