是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 13 A | 最大漏源导通电阻: | 0.07 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFIZ24N-024PBF | INFINEON |
获取价格 |
13A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | |
IRFIZ24N-029 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFIZ24N-030 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFIZ24N-030PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFIZ24N-031 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRFIZ24N-031PBF | INFINEON |
获取价格 |
13A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | |
IRFIZ24NPBF | INFINEON |
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HEXFET㈢ Power MOSFET | |
IRFIZ24V | INFINEON |
获取价格 |
Power MOSFET(Vdss=60V, Rds(on)=0.060ohm, Id=14A) | |
IRFIZ30 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | TO-251VAR | |
IRFIZ34 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-251VAR |